APTGV50H60BG Microsemi Power Products Group, APTGV50H60BG Datasheet
APTGV50H60BG
Specifications of APTGV50H60BG
Related parts for APTGV50H60BG
APTGV50H60BG Summary of contents
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... Low junction to case thermal resistance G4 • Solderable terminals both for power and signal 0/VBUS E4 for easy PCB mounting • Low profile • Easy paralleling due to positive T • RoHS Compliant www.microsemi.com APTGV50H60BG = 600V , I = 50A @ Tc = 80° 600V ; I = 50A @ Tc = 80° 600V ; I = 49A @ Tc = 25° Switching frequency up to 100 kHz - RBSOA & ...
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... Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off R Junction to Case Thermal resistance thJC APTGV50H60BG = 25°C unless otherwise specified j ® characteristics Parameter T = 25° 80° 25° 25° 150°C ...
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... 30A 30A 400V R di/dt =200A/µs Parameter Test Conditions 600V CE V =15V 50A 1mA 20V www.microsemi.com APTGV50H60BG Min Typ Max 600 T = 25° 125°C 500 80°C 30 1.8 2.3 2 125°C 1 25° 125°C 160 25° 125°C 480 j 1 ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr R Junction to Case Thermal resistance thJC APTGV50H60BG Test Conditions 25V 1MHz V = 15V 300V Bus I = 50A C Inductive Switching (25°C) V ...
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... 4.7Ω G Inductive switching @ 25° 10V ; V = 400V GS Bus I = 49A ; R = 4.7Ω Inductive switching @ 125° 10V ; V = 400V GS Bus I = 49A ; R = 4.7Ω www.microsemi.com APTGV50H60BG Max ratings 600 T = 25° 80° 130 ± 25°C 290 1900 Min Typ Max T = 25°C 250 125° ...
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... STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight * Tj=175°C for Trench & Field Stop IGBT 5. SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGV50H60BG Test Conditions T = 25° =600V 125° 80° ...
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... Eon Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 0.0001 APTGV50H60BG =15V) GE 100 T = 150° =150° 2 0.5 Energy losses vs Collector Current 3 300V 15V ...
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... Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.2 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration (Seconds) APTGV50H60BG T =1 25° =25°C J 0.5 1.0 1.5 2.0 2.5 3.0 , Anode to Cathode Voltage (V) F Single Pulse 0.01 0.1 www.microsemi.com ...
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... Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0. Junction Temperature (°C) J APTGV50H60BG =15V) Output Characteristics (V 150 250µs Pulse Test < 0.5% Duty cycle T =25°C J 100 T =125° Collector to Emitter Voltage ( 50A 25°C ...
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... Switching Energy Losses vs Gate Resistance 400V 15V 2 125°C Eon, 50A J 2 1.5 Eoff, 50A 1 0.5 Eon, 50A Gate Resistance (Ohms) APTGV50H60BG Turn-Off Delay Time vs Collector Current 175 150 125 100 400V 2.7Ω 150 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V ...
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... Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.2 0.05 0 0.00001 0.0001 Rectangular Pulse Duration (Seconds) APTGV50H60BG Operating Frequency vs Collector Current 240 200 Cies 160 120 80 Coes hard 40 switching Collector Current (A) ...
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... V V =10V @ 50A GS GS 1.2 1.15 1.1 1.05 1 0.95 0 100 120 140 I , Drain Current (A) D APTGV50H60BG Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Transfert Characteristics 140 V > 120 6.5V 250µs pulse test @ < 0.5 duty cycle 6V 100 80 5. 4.5V ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Coss 10000 1000 100 Drain to Source Voltage (V) DS APTGV50H60BG ON resistance vs Temperature 3.0 V =10V GS 2 50A D 2.0 1.5 1.0 0.5 0 150 T , Junction Temperature (°C) J Maximum Safe Operating Area 1000 limited by R 100 ...
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... V =400V ZVS DS 250 D=50% R =5Ω G 200 T =125° =75°C ZCS C 150 100 hard 50 switching Drain Current (A) D www.microsemi.com APTGV50H60BG Rise and Fall times vs Current 70 V =400V =5Ω =125° L=100µ Drain Current (A) D Switching Energy vs Gate Resistance 2.5 V ...
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... U.S and Foreign patents pending. All Rights Reserved. Forw ard Current vs Forw ard Voltage 200 160 T =1 25°C J 120 80 T =25° 0.0 0.5 1.0 1.5 2 Anode to Cathode Voltage (V) F Single Pulse 0.0001 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGV50H60BG 2.5 3.0 0 ...