APTGF100DU120TG Microsemi Power Products Group, APTGF100DU120TG Datasheet - Page 4

• Manufacturer Part Number: APTGF100DU120TG
• Description: IGBT MODULE NPT DUAL 1200V SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF100DU120TG

• Igbt Type: NPT
• Configuration: Dual, Common Source
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 100A
• Current - Collector (ic) (max): 135A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 6.9nF @ 25V
• Power - Max: 568W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
600
500
400
300
200
100
400
320
240
160
80
0
9
8
7
6
5
4
3
2
1
0
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
9
0
On state Voltage vs Gate to Emitter Volt.
-50
250µs Pulse Test
< 0.5% Duty cycle
T
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
Breakdown Voltage vs Junction Temp.
V
J
= 25°C
V
CE
10
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
V
-25
, Gate to Emitter Voltage (V)
T
GE
J
, Junction Temperature (°C)
4
, Gate to Emitter Voltage (V)
2
Transfer Characteristics
11
0
T
J
=125°C
12
25
8
4
13
50
T
J
=25°C
T
14
75
GE
J
12
T
=25°C
6
J
T
=15V)
=125°C
J
Ic=200A
=25°C
Ic=100A
Ic=50A
100 125
15
16
16
8
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180
160
140
120
100
18
16
14
12
10
APTGF100DU120TG
100
80
60
40
20
8
6
4
2
0
6
5
4
3
2
1
0
80
60
40
20
0
-50
0
0
-50 -25
DC Collector Current vs Case Temperature
0
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
V
250µs Pulse Test
< 0.5% Duty cycle
V
I
T
C
GE
CE
J
100
= 100A
-25
= 25°C
Output Characteristics (V
= 15V
, Collector to Emitter Voltage (V)
T
J
, Junction Temperature (°C)
T
C
200
0
1
, Case Temperature (°C)
0
Gate Charge (nC)
Gate Charge
25
300
25
V
CE
50
2
=600V
400
50
75
T
J
V
=25°C
500
75
GE
CE
100 125 150
=10V)
T
=240V
3
J
V
Ic=200A
Ic=100A
Ic=50A
=125°C
CE
100
600
=960V
125
700
4
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