APTGF100A120TG Microsemi Power Products Group, APTGF100A120TG Datasheet - Page 6

• Manufacturer Part Number: APTGF100A120TG
• Description: IGBT MODULE NPT PHASE 1200V SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF100A120TG

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 100A
• Current - Collector (ic) (max): 135A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 6.9nF @ 25V
• Power - Max: 568W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
10000
0.25
0.15
0.05
1000
0.2
0.1
100
0.00001
0
Capacitance vs Collector to Emitter Voltage
0
0.9
0.7
0.5
0.3
0.1
0.05
V
CE
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
40
www.microsemi.com
0.001
Coes
Rectangular Pulse Duration (Seconds)
Cres
Cies
50
Single Pulse
0.01
250
200
150
100
50
120
100
80
60
40
20
0
0
Operating Frequency vs Collector Current
0
10
APTGF100A120TG
V
CE
switching
Reverse Bias Safe Operating Area
Hard
, Collector to Emitter Voltage (V)
0.1
30
I
C
400
, Collector Current (A)
50
ZVS
ZCS
800
1
70
V
D = 50%
R
T
T
G
J
C
CE
= 125°C
= 75°C
= 2.5Ω
= 600V
90
1200
110
10
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