APTGT150DA120G

Manufacturer Part NumberAPTGT150DA120G
DescriptionIGBT 1200V 220A 690W SP6
ManufacturerMicrosemi Power Products Group
APTGT150DA120G datasheets

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Specifications of APTGT150DA120G

Igbt TypeTrench and Field StopConfigurationSingle
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic2.1V @ 15V, 150A
Current - Collector (ic) (max)220ACurrent - Collector Cutoff (max)350µA
Input Capacitance (cies) @ Vce10.7nF @ 25VPower - Max690W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Boost chopper
Fast Trench + Field Stop IGBT
Power Module
CR1
Q2
G2
E2
0/VBUS
VBUS
0/VBUS
E2
G2
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGT150DA120G
®
Application
AC and DC motor control
VBUS
Switched Mode Power Supplies
Power Factor Correction
Features
Fast Trench + Field Stop IGBT
OUT
-
-
-
-
-
-
-
-
Kelvin emitter for easy drive
Very low stray inductance
-
-
High level of integration
Benefits
OUT
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Max ratings
1200
T
= 25°C
220
C
T
= 80°C
150
C
T
= 25°C
350
C
±20
T
= 25°C
690
C
T
= 125°C
300A @ 1150V
j
www.microsemi.com
V
= 1200V
CES
I
= 150A @ Tc = 80°C
C
®
Technology
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
M5 power connectors
Unit
V
A
V
W
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APTGT150DA120G Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT150DA120G ® Application • AC and DC motor control VBUS • Switched Mode Power Supplies • ...

  • Page 2

    ... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT150DA120G = 25°C unless otherwise specified j Test Conditions 1200V 25° 15V 150A T = 125°C C ...

  • Page 3

    ... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT150DA120G Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...

  • Page 4

    ... Eon Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.1 0.04 0.05 0 0.00001 0.0001 APTGT150DA120G =15V) GE 300 T 250 T =125°C J 200 150 100 Energy losses vs Collector Current =25° ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT150DA120G Forward Characteristic of diode 300 ...