APTGF75H120TG Microsemi Power Products Group, APTGF75H120TG Datasheet

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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF75H120TG V CES I C Application • Welding converters • Switched Mode Power Supplies • ...

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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGF75H120TG = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

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... Thermistor value at T     T −     25 IGBT Diode To heatsink ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : www.microsemi.com APTGF75H120TG Min Typ Max Unit 50 kΩ K 3952 Min Typ Max Unit 0.25 °C/W 0.6 2500 V -40 150 ° ...

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... Reverse Bias Safe Operating Area 175 Eon 150 125 100 =125° IGBT Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APTGF75H120TG Output Characteristics = 125°C V =15V GE V =20V GE V =12V 600V = 15V = 7.5 Ω Eon Eoff Er 25 ...

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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF75H120TG Forward Characteristic of diode 125 ...