APTGF200U120DG Microsemi Power Products Group, APTGF200U120DG Datasheet

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APTGF200U120DG

Manufacturer Part Number
APTGF200U120DG
Description
IGBT 1200V 275A 1136W SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF200U120DG

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 200A
Current - Collector (ic) (max)
275A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
13.8nF @ 25V
Power - Max
1136W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
EK
E
G
V
V
I
NPT IGBT Power Module
P
I
CM
CES
C
GE
D
CK
EK
G
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
with Series diodes
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Single Switch
Parameter
E
C
www.microsemi.com
C
CK
T
T
T
T
T
c
c
c
c
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
400A @ 1200V
Max ratings
Zero Current Switching resonant mode
Non Punch Through (NPT) FAST IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
1200
1136
APTGF200U120DG
-
-
-
-
-
-
-
-
-
-
275
200
600
±20
V
I
C
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
CES
Symmetrical design
M5 power connectors
= 200A @ Tc = 80°C
= 1200V
Unit
W
V
A
V
1 – 6

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APTGF200U120DG Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF200U120DG V CES I C Application • Zero Current Switching resonant mode C Features • ...

Page 2

... Series diode ratings and characteristics Symbol Characteristic V Maximum Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF200U120DG = 25°C unless otherwise specified j Test Conditions 25° 1200V T = 125° 25°C V =15V ...

Page 3

... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF200U120DG IGBT Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.11 °C/W ...

Page 4

... Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 - Junction Temperature (°C) J APTGF200U120DG Output Characteristics (V =15V) GE 200 250µs Pulse Test T =25°C J < 0.5% Duty cycle 150 100 T =125° ...

Page 5

... Eon, 200A 15V 125° Eoff, 200A 32 24 Eon, 100A 16 8 Eoff, 100A 0 0 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) www.microsemi.com APTGF200U120DG Turn-Off Delay Time vs Collector Current 400 V =15V =125°C 350 J 300 V =15V, GE 250 T =25° 600V 1.2Ω G 200 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF200U120DG Reverse Bias Safe Operating Area 450 ...

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