APTGF50TA120PG

Manufacturer Part NumberAPTGF50TA120PG
DescriptionIGBT MODULE NPT TRPL PHASE SP6P
ManufacturerMicrosemi Power Products Group
APTGF50TA120PG datasheet
 

Specifications of APTGF50TA120PG

Igbt TypeNPTConfigurationThree Phase
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.7V @ 15V, 50A
Current - Collector (ic) (max)75ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce3.45nF @ 25VPower - Max312W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Triple phase leg
NPT IGBT Power Module
VBUS1
VBUS2
G1
G3
E1
E3
U
V
G2
G4
E2
E4
0/VBUS1
0/VBUS2
VBUS 1
VBUS 2
G1
G3
E1
E3
0/VBUS 1
0/VBUS 2
E2
E4
G2
G4
U
V
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF50TA120PG
Application
Welding converters
Switched Mode Power Supplies
VBUS3
Uninterruptible Power Supplies
Motor control
G5
Features
Non Punch Through (NPT) FAST IGBT
-
E5
W
-
-
-
G6
-
-
E6
-
0/VBUS3
-
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Outstanding performance
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
VBUS 3
Solderable terminals both for power and signal for
easy PCB mounting
G5
Very low (12mm) profile
E5
0/VBUS 3
Easy paralleling due to positive TC of VCEsat
E6
Each leg can be easily paralleled to achieve a phase
G6
leg of three times the current capability
Module can be configured as a three phase bridge
W
Module can be configured as a boost followed by a
full bridge
RoHS compliant
Max ratings
1200
T
= 25°C
c
T
= 80°C
c
T
= 25°C
150
c
±20
T
= 25°C
312
c
T
= 150°C
100A @ 1200V
j
www.microsemi.com
V
= 1200V
CES
I
= 50A @ Tc = 80°C
C
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
-
Symmetrical design
-
Lead frames for power connections
at
high frequency
Unit
V
75
A
50
V
W
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APTGF50TA120PG Summary of contents

  • Page 1

    ... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF50TA120PG Application • Welding converters • Switched Mode Power Supplies VBUS3 • Uninterruptible Power Supplies • ...

  • Page 2

    ... Chopper diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50TA120PG = 25°C unless otherwise specified j Test Conditions 25° 1200V T = 125° 25°C V =15V ...

  • Page 3

    ... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6-P Package outline (dimensions in mm) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTGF50TA120PG Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 www.microsemi.com Typ Max Unit 0 ...

  • Page 4

    ... Pulse Test 7 < 0.5% Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 - Junction Temperature (°C) J APTGF50TA120PG =15V 250µs Pulse Test T =25°C < 0.5% Duty cycle =125° =25° =25° ...

  • Page 5

    ... 125° Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 Eoff, 25A Gate Resistance (Ohms) www.microsemi.com APTGF50TA120PG Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 5Ω G 200 125 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125°C ...

  • Page 6

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50TA120PG Reverse Bias Safe Operating Area 120 ...