APTGF50TA120PG Microsemi Power Products Group, APTGF50TA120PG Datasheet - Page 3
APTGF50TA120PG
Manufacturer Part Number
APTGF50TA120PG
Description
IGBT MODULE NPT TRPL PHASE SP6P
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF50TA120PG.pdf
(6 pages)
Specifications of APTGF50TA120PG
Igbt Type
NPT
Configuration
Three Phase
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.45nF @ 25V
Power - Max
312W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal and package characteristics
SP6-P Package outline
Symbol Characteristic
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
Torque
V
R
T
Wt
T
ISOL
T
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
www.microsemi.com
To heatsink
APTGF50TA120PG
Diode
IGBT
M6
2500
Min
-40
-40
-40
3
Typ
5 places (3:1)
Max
150
125
100
250
0.4
0.9
5
°C/W
Unit
N.m
°C
V
g
3 - 6