APTGF50TDU120PG Microsemi Power Products Group, APTGF50TDU120PG Datasheet - Page 4

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APTGF50TDU120PG

Manufacturer Part Number
APTGF50TDU120PG
Description
IGBT MODULE NPT TRPL DUAL SP6-P
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF50TDU120PG

Igbt Type
NPT
Configuration
Triple, Dual - Common Source
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.45nF @ 25V
Power - Max
312W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
300
250
200
150
100
200
160
120
50
80
40
0
9
8
7
6
5
4
3
2
1
0
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
9
0
On state Voltage vs Gate to Emitter Volt.
T
250µs Pulse Test
< 0.5% Duty cycle
-50
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
Breakdown Voltage vs Junction Temp.
V
J
V
= 25°C
CE
10
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
V
-25
, Gate to Emitter Voltage (V)
T
GE
J
, Junction Temperature (°C)
4
, Gate to Emitter Voltage (V)
2
Transfer Characteristics
11
0
T
J
=125°C
12
25
8
4
13
50
T
J
=25°C
T
14
T
75
J
GE
J
12
=25°C
T
6
=25°C
J
=15V)
=125°C
Ic=100A
www.microsemi.com
Ic=50A
Ic=25A
100 125
15
16
16
8
APTGF50TDU120PG
18
16
14
12
10
90
80
70
60
50
40
30
20
10
50
40
30
20
10
0
8
6
4
2
0
6
5
4
3
2
1
0
0
-50
-50
0
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
V
250µs Pulse Test
< 0.5% Duty cycle
V
I
T
C
GE
CE
J
-25
= 50A
-25
Output Characteristics (V
= 25°C
50
, Collector to Emitter Voltage (V)
= 15V
T
J
, Junction Temperature (°C)
T
C
0
1
100
, Case Temperature (°C)
0
Gate Charge (nC)
Gate Charge
25
150
25
50
V
2
CE
200
=600V
50
75
T
J
=25°C
V
250
GE
75
CE
100 125 150
T
=10V)
=240V
3
J
V
=125°C
Ic=100A
CE
Ic=50A
Ic=25A
100
300
=960V
125
350
4
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