APTGF50TDU120PG Microsemi Power Products Group, APTGF50TDU120PG Datasheet - Page 6

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APTGF50TDU120PG

Manufacturer Part Number
APTGF50TDU120PG
Description
IGBT MODULE NPT TRPL DUAL SP6-P
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF50TDU120PG

Igbt Type
NPT
Configuration
Triple, Dual - Common Source
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.45nF @ 25V
Power - Max
312W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
10000
0.45
0.35
0.25
0.15
0.05
1000
0.4
0.3
0.2
0.1
100
0.00001
0
Capacitance vs Collector to Emitter Voltage
0
V
0.05
0.1
0.9
0.7
0.5
0.3
CE
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
0.001
www.microsemi.com
40
Rectangular Pulse Duration (Seconds)
Coes
Cres
Cies
Single Pulse
50
0.01
APTGF50TDU120PG
120
100
80
60
40
20
120
100
80
60
40
20
0
0
Operating Frequency vs Collector Current
0
10
V
switching
CE
Reverse Bias Safe Operating Area
0.1
Hard
, Collector to Emitter Voltage (V)
20
I
C
400
, Collector Current (A)
ZCS
ZVS
30
800
1
40
V
D = 50%
R
T
T
G
J
C
CE
= 125°C
= 75°C
= 5Ω
= 600V
50
1200
10
60
6 - 7

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