APTGF300SK120G Microsemi Power Products Group, APTGF300SK120G Datasheet

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APTGF300SK120G

Manufacturer Part Number
APTGF300SK120G
Description
IGBT 1200V 400A 1780W SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF300SK120G

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 300A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
21nF @ 25V
Power - Max
1780W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
NPT IGBT Power Module
V
I
P
I
CM
CES
C
GE
D
G1
E1
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VBUS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
G1
E1
Buck chopper
Parameter
0/VBUS
Q1
CR2
VBUS
0/VBUS
OUT
OUT
www.microsemi.com
T
T
T
T
T
c
c
c
c
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
600A @ 1200V
Max ratings
AC and DC motor control
Switched Mode Power Supplies
Non Punch Through (NPT) FAST IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
Low profile
RoHS compliant
1200
1780
-
-
-
-
-
-
-
-
-
-
400
300
600
±20
APTGF300SK120G
V
I
C
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
M5 power connectors
CES
= 300A @ Tc = 80°C
= 1200V
Unit
W
V
A
V
C
of V
CEsat
1 - 5

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APTGF300SK120G Summary of contents

Page 1

... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF300SK120G Application • AC and DC motor control • Switched Mode Power Supplies Features • Non Punch Through (NPT) FAST IGBT ...

Page 2

... Chopper diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF300SK120G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

Page 3

... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF300SK120G IGBT Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.07 °C/W ...

Page 4

... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 0.07 0.9 0.06 0.7 0.05 0.5 0.04 0.03 0.3 0.02 0.1 0.01 0.05 0 0.00001 0.0001 APTGF300SK120G =15V) GE 600 T J 500 400 300 200 T =125°C J 100 Energy losses vs Collector Current ...

Page 5

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF300SK120G Forward Characteristic of diode 1000 ...

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