APTGF250A60D3G Microsemi Power Products Group, APTGF250A60D3G Datasheet

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APTGF250A60D3G

Manufacturer Part Number
APTGF250A60D3G
Description
IGBT MODULE NPT PHASE LEG D3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF250A60D3G

Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 300A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
13nF @ 25V
Power - Max
1250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
V
I
P
I
CM
CES
C
GE
D
NPT IGBT Power Module
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
4
5
6
7
Phase leg
Q1
Q2
Parameter
1
3
2
www.microsemi.com
T
T
T
T
T
C
C
C
C
j
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
600A @ 520V
Max ratings
APTGF250A60D3G
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) FAST IGBT
Kelvin emitter for easy drive
High level of integration
M6 power connectors
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
1250
600
400
250
600
±20
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
V
I
C
CES
= 250A @ Tc = 80°C
= 600V
Unit
W
V
A
V
C
of V
CEsat
1 - 5

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APTGF250A60D3G Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF250A60D3G Application • Welding converters 3 • Switched Mode Power Supplies • Uninterruptible Power Supplies • ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current RRM I DC Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy rr APTGF250A60D3G = 25°C unless otherwise specified j Test Conditions 600V 25° 15V 300A T = 125°C C ...

Page 3

... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight (dimensions in mm) D3 Package outline A APTGF250A60D3G Min IGBT Diode 2500 -40 -40 -40 For terminals Heatsink M6 3 1° DÉTAIL A www.microsemi.com Typ ...

Page 4

... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.3 0.04 0.1 0.02 0.05 0 0.00001 0.0001 APTGF250A60D3G =15V) GE 600 T J =25°C 500 J 400 T =125°C J 300 200 100 0 2 2.5 3 3.5 0 Energy losses vs Collector Current ...

Page 5

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF250A60D3G 600 V ...

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