APTGF250A60D3G Microsemi Power Products Group, APTGF250A60D3G Datasheet - Page 4

• Manufacturer Part Number: APTGF250A60D3G
• Description: IGBT MODULE NPT PHASE LEG D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF250A60D3G

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 300A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 13nF @ 25V
• Power - Max: 1250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
600
500
400
300
200
100
600
500
400
300
200
100
40
30
20
10
0.12
0.08
0.06
0.04
0.02
Switching Energy Losses vs Gate Resistance
0
0.1
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
GE
J
= 300A
= 125°C
Output Characteristics (V
= 300V
=15V
0.9
0.3
0.5
0.5
0.1
0.7
6
0.05
5
Transfert Characteristics
Gate Resistance (ohms)
1
7
10
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
T
J
0.0001
=125°C
1.5
V
8
V
CE
GE
15
T
(V)
J
(V)
=25°C
T
2
9
J
=25°C
20
2.5
10
GE
T
=15V)
J
=125°C
25
0.001
rectangular Pulse Duration (Seconds)
3
11
Err
Eoff
Eon
3.5
Single Pulse
30
12
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IGBT
0.01
700
600
500
400
300
200
100
30
25
20
15
10
600
500
400
300
200
100
5
0
0
0
APTGF250A60D3G
0
0
0
V
V
R
T
V
T
R
T
Energy losses vs Collector Current
CE
GE
J
G
GE
J
G
=125°C
J
= 125°C
=6 Ω
= 6 Ω
0.1
Reverse Safe Operating Area
= 125°C
= 300V
=15V
= 15V
100
150
1
Output Characteristics
V
GE
200
=20V
2
I
C
V
300
300
CE
(A)
V
CE
(V)
1
Eon
(V)
3
400
V
GE
450
=15V
V
Eoff
Err
V
GE
500
GE
4
=9V
=12V
600
10
600
5
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