APTGF250A60D3G Microsemi Power Products Group, APTGF250A60D3G Datasheet - Page 5

• Manufacturer Part Number: APTGF250A60D3G
• Description: IGBT MODULE NPT PHASE LEG D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF250A60D3G

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 300A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 13nF @ 25V
• Power - Max: 1250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
-0.02
0.22
0.18
0.14
0.06
0.02
70
60
50
40
30
20
10
0.1
0.00001
0
0
Operating Frequency vs Collector Current
0.05
0.9
0.7
0.5
0.1
0.3
switching
hard
100
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.0001
I
C
200
(A)
ZVS
ZCS
V
D=50%
R
T
T
300
J
C
CE
G
=125°C
=75°C
=6Ω
=300V
0.001
rectangular Pulse Duration (Seconds)
400
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Single Pulse
0.01
600
500
400
300
200
100
APTGF250A60D3G
0
0
0.1
Forward Characteristic of diode
0.3
0.6
V
T
F
J
1
=125°C
(V)
0.9
Diode
T
J
=25°C
1.2
10
1.5
5 - 5