APTGT150DH120G

Manufacturer Part NumberAPTGT150DH120G
DescriptionIGBT MOD TRENCH ASYM BRIDGE SP6
ManufacturerMicrosemi Power Products Group
APTGT150DH120G datasheets

Availability: By request

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

Select quantity

 

Specifications of APTGT150DH120G

Igbt TypeTrench and Field StopConfigurationAsymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic2.1V @ 15V, 150A
Current - Collector (ic) (max)220ACurrent - Collector Cutoff (max)350µA
Input Capacitance (cies) @ Vce10.7nF @ 25VPower - Max690W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
Page 2/5

Download datasheet (250Kb)Embed
PrevNext
All ratings @ T
Electrical Characteristics
Symbol Characteristic
I
Zero Gate Voltage Collector Current
CES
V
Collector Emitter Saturation Voltage
CE(sat)
V
Gate Threshold Voltage
GE(th)
I
Gate – Emitter Leakage Current
GES
Dynamic Characteristics
Symbol Characteristic
C
Input Capacitance
ies
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
res
T
Turn-on Delay Time
d(on)
T
Rise Time
r
T
Turn-off Delay Time
d(off)
T
Fall Time
f
T
Turn-on Delay Time
d(on)
T
Rise Time
r
T
Turn-off Delay Time
d(off)
T
Fall Time
f
E
Turn-on Switching Energy
on
E
Turn-off Switching Energy
off
Diode ratings and characteristics
Symbol Characteristic
V
Maximum Peak Repetitive Reverse Voltage
RRM
I
Maximum Reverse Leakage Current
RM
I
DC Forward Current
F
V
Diode Forward Voltage
F
t
Reverse Recovery Time
rr
Q
Reverse Recovery Charge
rr
E
Reverse Recovery Energy
r
APTGT150DH120G
= 25°C unless otherwise specified
j
Test Conditions
V
= 0V, V
= 1200V
GE
CE
T
= 25°C
V
= 15V
j
GE
I
= 150A
T
= 125°C
C
j
V
= V
, I
= 3 mA
GE
CE
C
V
= 20V, V
= 0V
GE
CE
Test Conditions
V
= 0V
GE
V
= 25V
CE
f = 1MHz
Inductive Switching (25°C)
V
= ±15V
GE
V
= 600V
Bus
I
= 150A
C
R
= 2.2Ω
G
Inductive Switching (125°C)
V
= ±15V
GE
V
= 600V
Bus
I
= 150A
C
R
= 2.2Ω
G
V
= ±15V
GE
T
= 125°C
j
V
= 600V
Bus
I
= 150A
C
T
= 125°C
j
R
= 2.2Ω
G
Test Conditions
Min
1200
T
= 25°C
j
V
=1200V
R
T
= 125°C
j
Tc = 80°C
T
= 25°C
j
I
= 150A
F
T
= 125°C
j
T
= 25°C
j
T
= 125°C
j
I
= 150A
F
T
= 25°C
V
= 600V
j
R
T
= 125°C
di/dt =2500A/µs
j
T
= 25°C
j
T
= 125°C
j
www.microsemi.com
Min
Typ
Max
Unit
350
µA
1.7
2.1
V
2.0
5.0
5.8
6.5
V
400
nA
Min
Typ
Max
Unit
10.7
nF
0.56
0.48
280
40
ns
420
75
290
45
ns
520
90
14
mJ
16
Typ
Max
Unit
V
250
µA
600
150
A
1.6
2.1
V
1.6
170
ns
280
14
µC
28
6
mJ
11
2 - 5

Related parts for APTGT150DH120G

Part Number DescriptionManufacturer Datasheet
  APTGT150DU120TG IGBT MOD TRENCH DUAL SOURCE SP4 Microsemi Power Products Group
  APTGT150DA60T1G IGBT BOOST CHOP 600V 225A SP1 Microsemi Power Products Group
  APTGT150DU60TG IGBT MOD TRENCH DUAL SOURCE SP4 Microsemi Power Products Group
  APTGT150DH60TG IGBT MOD TRENCH ASYM BRIDGE SP4 Microsemi Power Products Group
  APTGT150DA120TG IGBT 1200V 200A 690W SP4 Microsemi Power Products Group
  APTGT150DA120D1G IGBT 1200V 220A 700W D1 Microsemi Power Products Group
  APTGT150DA120G IGBT 1200V 220A 690W SP6 Microsemi Power Products Group
  APTGT150DA170G IGBT 1700V 250A 890W SP6 Microsemi Power Products Group
  APTGT150DU120G IGBT MOD TRENCH DUAL SOURCE SP6 Microsemi Power Products Group
  APTGT150DU170G IGBT MOD TRENCH DUAL SOURCE SP6 Microsemi Power Products Group
  APTGT150DH170G IGBT MOD TRENCH ASYM BRIDGE SP6 Microsemi Power Products Group
  APTGT150DA170D1G IGBT 1700V 280A 780W D1 Microsemi Power Products Group
  APTGT150DA60TG IGBT 600V 225A 480W SP4 Microsemi Power Products Group
APTGT150A120T3AG  APTGT150A120T3AG IGBT ARRAY 1200V 220A 833W SP3 Microsemi Power Products Group
APTGT150TL60G  APTGT150TL60G IGBT 3-LEVEL INVERTER 600V SP6 Microsemi Power Products Group