APTGT150DH120G

Manufacturer Part NumberAPTGT150DH120G
DescriptionIGBT MOD TRENCH ASYM BRIDGE SP6
ManufacturerMicrosemi Power Products Group
APTGT150DH120G datasheets

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Specifications of APTGT150DH120G

Igbt TypeTrench and Field StopConfigurationAsymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic2.1V @ 15V, 150A
Current - Collector (ic) (max)220ACurrent - Collector Cutoff (max)350µA
Input Capacitance (cies) @ Vce10.7nF @ 25VPower - Max690W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Operating Frequency vs Collector Current
60
50
40
ZVS
30
ZCS
20
10
Hard
switching
0
0
40
80
120
I
(A)
C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
0.1
0.05
0.05
0
0.00001
0.0001
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APTGT150DH120G
Forward Characteristic of diode
300
V
=600V
CE
250
D=50%
R
=2.2Ω
G
200
T
=125°C
J
T
=75°C
c
150
100
50
0
0
0.4
160
200
240
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
www.microsemi.com
T
=25°C
J
T
=125°C
J
T
=125°C
J
0.8
1.2
1.6
2
2.4
V
(V)
F
Diode
1
10
5 - 5

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