APTGT100DH170G Microsemi Power Products Group, APTGT100DH170G Datasheet

no-image

APTGT100DH170G

Manufacturer Part Number
APTGT100DH170G
Description
IGBT MOD TRENCH ASYM BRIDGE SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT100DH170G

Igbt Type
Trench and Field Stop
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 100A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
9nF @ 25V
Power - Max
560W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
V
I
P
I
CM
CES
C
GE
D
Trench + Field Stop IGBT
G1
E1
G1
E1
Asymmetrical - Bridge
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VBUS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
CR2
Q1
Power Module
OUT1
Parameter
0/VBUS
OUT2
VBUS
0/VBUS
OUT1
OUT2
CR3
Q4
G4
E4
www.microsemi.com
E4
G4
®
T
T
T
T
T
C
C
C
C
j
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
200A @ 1600V
APTGT100DH170G
Max ratings
1700
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Trench + Field Stop IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
150
100
200
±20
560
-
-
-
-
-
-
-
-
-
-
V
I
C
CES
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
M5 power connectors
= 100A @ Tc = 80°C
= 1700V
Unit
W
V
A
V
®
Technology
1 - 5

Related parts for APTGT100DH170G

APTGT100DH170G Summary of contents

Page 1

... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT100DH170G ® Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT100DH170G = 25°C unless otherwise specified j Test Conditions 1700V 25° 15V 100A T = 125°C C ...

Page 3

... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT100DH170G Min IGBT Diode 3500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...

Page 4

... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 0.0001 APTGT100DH170G =15V) GE 200 T J 160 120 T =125° 2 Energy losses vs Collector Current 100 =25° ...

Page 5

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT100DH170G 200 V ...

Related keywords