APTGF350A60G Microsemi Power Products Group, APTGF350A60G Datasheet
APTGF350A60G
Specifications of APTGF350A60G
APTGF350A60GMI
Related parts for APTGF350A60G
APTGF350A60G Summary of contents
Page 1
... T = 25°C 1562 150°C 800A @ 600V j www.microsemi.com APTGF350A60G = 600V CES = 350A @ Tc = 80°C C ® Low voltage drop Low tail current Switching frequency up to 100 kHz Soft recovery parallel diodes Low diode VF Low leakage current Avalanche energy rated ...
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... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF350A60G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...
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... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF350A60G Min IGBT Diode 2500 To heatsink M6 For terminals M5 www.microsemi.com Typ Max Unit 0.08 ° ...
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... Ic=720A 2.5 Ic=360A 2 1.5 Ic=360A Ic=180A 1 Ic=180A 0 -50 - Collector Current vs Case Temperature 500 400 300 200 100 100 125 0 www.microsemi.com APTGF350A60G =10V =-55° =25° =125° Collector to Emitter Voltage (V) Gate Charge V =120V CE V =300V CE V =480V CE 400 600 800 1000 1200 1400 Gate Charge (nC) 250µ ...
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... Eon, 720A 15V GE Eoff, 720A 125°C J Eoff, 360A 32 Eon, 360A Eoff, 180A 16 Eon, 180A Gate Resistance (Ohms) www.microsemi.com APTGF350A60G Turn-Off Delay Time vs Collector Current 250 V =15V, 200 GE T =125°C J 150 V =15V, GE 100 T =25° 400V 1.25Ω 100 200 ...
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... Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 180 160 140 120 100 Hard 20 switching 0 50 100 150 200 250 300 350 400 450 www.microsemi.com APTGF350A60G 200 400 600 800 , Collector to Emitter Voltage ( 400V 50 1.25Ω 125°C J ZCS T =75° ...