APTGF350A60G Microsemi Power Products Group, APTGF350A60G Datasheet

POWER MODULE IGBT 600V 350A SP6

APTGF350A60G

Manufacturer Part Number
APTGF350A60G
Description
POWER MODULE IGBT 600V 350A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF350A60G

Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 360A
Current - Collector (ic) (max)
430A
Current - Collector Cutoff (max)
200µA
Input Capacitance (cies) @ Vce
17.2nF @ 25V
Power - Max
1562W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTGF350A60GMI
APTGF350A60GMI
Absolute maximum ratings
RBSOA
Symbol
V
NPT IGBT Power Module
V
I
P
I
CM
CES
C
GE
D
G1
E1
E2
G2
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VBUS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
G1
E1
G2
E2
Phase leg
Parameter
0/VBUS
Q1
Q2
VBUS
0/VBUS
OUT
OUT
www.microsemi.com
T
T
T
T
T
c
c
c
c
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
800A @ 600V
Max ratings
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) Fast IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
1225
1562
-
-
-
-
-
-
-
-
-
-
600
430
350
±20
V
I
C
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
M5 power connectors
CES
APTGF350A60G
= 350A @ Tc = 80°C
= 600V
Unit
W
V
A
V
®
1 - 6

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APTGF350A60G Summary of contents

Page 1

... T = 25°C 1562 150°C 800A @ 600V j www.microsemi.com APTGF350A60G = 600V CES = 350A @ Tc = 80°C C ® Low voltage drop Low tail current Switching frequency up to 100 kHz Soft recovery parallel diodes Low diode VF Low leakage current Avalanche energy rated ...

Page 2

... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF350A60G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...

Page 3

... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF350A60G Min IGBT Diode 2500 To heatsink M6 For terminals M5 www.microsemi.com Typ Max Unit 0.08 ° ...

Page 4

... Ic=720A 2.5 Ic=360A 2 1.5 Ic=360A Ic=180A 1 Ic=180A 0 -50 - Collector Current vs Case Temperature 500 400 300 200 100 100 125 0 www.microsemi.com APTGF350A60G =10V =-55° =25° =125° Collector to Emitter Voltage (V) Gate Charge V =120V CE V =300V CE V =480V CE 400 600 800 1000 1200 1400 Gate Charge (nC) 250µ ...

Page 5

... Eon, 720A 15V GE Eoff, 720A 125°C J Eoff, 360A 32 Eon, 360A Eoff, 180A 16 Eon, 180A Gate Resistance (Ohms) www.microsemi.com APTGF350A60G Turn-Off Delay Time vs Collector Current 250 V =15V, 200 GE T =125°C J 150 V =15V, GE 100 T =25° 400V 1.25Ω 100 200 ...

Page 6

... Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 180 160 140 120 100 Hard 20 switching 0 50 100 150 200 250 300 350 400 450 www.microsemi.com APTGF350A60G 200 400 600 800 , Collector to Emitter Voltage ( 400V 50 1.25Ω 125°C J ZCS T =75° ...

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