APTGF200A120D3G Microsemi Power Products Group, APTGF200A120D3G Datasheet - Page 3

• Manufacturer Part Number: APTGF200A120D3G
• Description: IGBT MODULE NPT PHASE LEG D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF200A120D3G

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 200A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 13nF @ 25V
• Power - Max: 1400W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal and package characteristics
Symbol Characteristic
Torque
D3 Package outline
V
R
T
Wt
T
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
A
(dimensions in mm)
www.microsemi.com
For terminals
To Heatsink
1°
APTGF200A120D3G
Diode
IGBT
M6
M6
DÉTAIL A
2500
Min
-40
-40
-40
3
3
Typ
Max
0.09
0.16
150
125
125
350
5
5
Unit
°C/W
N.m
°C
V
g
3 - 5