APTGF180H60G

Manufacturer Part NumberAPTGF180H60G
DescriptionIGBT MODULE NPT FULL BRIDGE SP6
ManufacturerMicrosemi Power Products Group
APTGF180H60G datasheet
 


Specifications of APTGF180H60G

Igbt TypeNPTConfigurationFull Bridge Inverter
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.5V @ 15V, 180A
Current - Collector (ic) (max)220ACurrent - Collector Cutoff (max)300µA
Input Capacitance (cies) @ Vce8.6nF @ 25VPower - Max833W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Full - bridge
NPT IGBT Power Module
VBUS
Q1
Q3
G1
E1
OUT1
OUT2
Q2
Q4
G2
E2
0/VBUS
OUT1
G1
VBUS
0/VBUS
E1
E3
G3
OUT2
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF180H60G
V
CES
I
= 180A @ Tc = 80°C
C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
G3
Features
Non Punch Through (NPT) Fast IGBT
E3
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
G4
-
Low diode VF
-
Low leakage current
E4
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
G2
Benefits
E2
Outstanding performance at high frequency
operation
E4
Stable temperature behavior
G4
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
Max ratings
600
T
= 25°C
220
c
T
= 80°C
180
c
T
= 25°C
630
c
±20
T
= 25°C
833
c
T
= 150°C
400A @ 600V
j
www.microsemi.com
= 600V
®
Unit
V
A
V
W
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APTGF180H60G Summary of contents

  • Page 1

    ... V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF180H60G V CES I = 180A @ Tc = 80°C C Application • Welding converters • Switched Mode Power Supplies • ...

  • Page 2

    ... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF180H60G = 25°C unless otherwise specified j Test Conditions 25° 600V T = 125° 25°C V =15V ...

  • Page 3

    ... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF180H60G IGBT Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.15 °C/W ...

  • Page 4

    ... Ic=360A 3 Ic=360A 2.5 Ic=180A 2 1.5 Ic=180A Ic=90A 1 Ic=90A 0 -50 DC Collector Current vs Case Temperature 300 250 200 150 100 100 125 -50 -25 www.microsemi.com APTGF180H60G =10V =-55° =25° =125° Collector to Emitter Voltage (V) Gate Charge V =120V CE = 25°C V =300V CE V =480V CE 100 200 ...

  • Page 5

    ... Eon, 360A 15V GE Eoff, 360A 125°C J Eoff, 180A 16 Eon, 180A Eoff, 90A 8 Eon, 90A Gate Resistance (Ohms) www.microsemi.com APTGF180H60G Turn-Off Delay Time vs Collector Current 250 V =15V, 200 GE T =125°C J 150 V =15V, GE 100 T =25° 400V 2.5Ω 100 ...

  • Page 6

    ... V , Collector to Emitter Voltage (V) CE Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 180 150 120 Hard switching 0 40 www.microsemi.com APTGF180H60G 200 400 600 800 400V 50 2.5Ω 125°C J Tc=75°C ZCS ZVS 80 120 160 200 ...