APTGF180H60G Microsemi Power Products Group, APTGF180H60G Datasheet

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... V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF180H60G V CES I = 180A @ Tc = 80°C C Application • Welding converters • Switched Mode Power Supplies • ...

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... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF180H60G = 25°C unless otherwise specified j Test Conditions 25° 600V T = 125° 25°C V =15V ...

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... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF180H60G IGBT Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.15 °C/W ...

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... Ic=360A 3 Ic=360A 2.5 Ic=180A 2 1.5 Ic=180A Ic=90A 1 Ic=90A 0 -50 DC Collector Current vs Case Temperature 300 250 200 150 100 100 125 -50 -25 www.microsemi.com APTGF180H60G =10V =-55° =25° =125° Collector to Emitter Voltage (V) Gate Charge V =120V CE = 25°C V =300V CE V =480V CE 100 200 ...

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... Eon, 360A 15V GE Eoff, 360A 125°C J Eoff, 180A 16 Eon, 180A Eoff, 90A 8 Eon, 90A Gate Resistance (Ohms) www.microsemi.com APTGF180H60G Turn-Off Delay Time vs Collector Current 250 V =15V, 200 GE T =125°C J 150 V =15V, GE 100 T =25° 400V 2.5Ω 100 ...

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... V , Collector to Emitter Voltage (V) CE Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 180 150 120 Hard switching 0 40 www.microsemi.com APTGF180H60G 200 400 600 800 400V 50 2.5Ω 125°C J Tc=75°C ZCS ZVS 80 120 160 200 ...