APTGT450DU60G

Manufacturer Part NumberAPTGT450DU60G
DescriptionIGBT MOD TRENCH DUAL SOURCE SP6
ManufacturerMicrosemi Power Products Group
APTGT450DU60G datasheets

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Warranty: 60 days

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Specifications of APTGT450DU60G

Igbt TypeTrench and Field StopConfigurationDual, Common Source
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic1.8V @ 15V, 450A
Current - Collector (ic) (max)550ACurrent - Collector Cutoff (max)500µA
Input Capacitance (cies) @ Vce37nF @ 25VPower - Max1750W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Dual common source
Trench + Field Stop IGBT
Power Module
C1
C2
Q1
G1
E1
E
G1
C1
E
E1
E2
G2
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGT450DU60G
V
®
I
Application
•
AC Switches
•
Switched Mode Power Supplies
•
Uninterruptible Power Supplies
Q2
G2
Features
•
Trench + Field Stop IGBT
E2
-
-
-
-
-
-
-
-
•
Kelvin emitter for easy drive
•
Very low stray inductance
-
-
•
High level of integration
C2
Benefits
•
Stable temperature behavior
•
Very rugged
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Easy paralleling due to positive TC of VCEsat
•
Low profile
•
RoHS Compliant
Max ratings
600
T
= 25°C
550
C
T
= 80°C
450
C
T
= 25°C
600
C
±20
T
= 25°C
1750
C
T
= 150°C
900A @ 550V
j
www.microsemi.com
= 600V
CES
= 450A @ Tc = 80°C
C
®
Technology
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
M5 power connectors
Unit
V
A
V
W
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APTGT450DU60G Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT450DU60G V ® I Application • AC Switches • Switched Mode Power Supplies • ...

  • Page 2

    ... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT450DU60G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 450A T = 150°C C ...

  • Page 3

    ... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT450DU60G Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...

  • Page 4

    ... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 0.0001 APTGT450DU60G =15V) GE 1000 T 800 T =150°C 600 J 400 200 =25° 1.5 2 2.5 0 Energy losses vs Collector Current ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT450DU60G 1000 V ...

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