APTGF300DU120G

Manufacturer Part NumberAPTGF300DU120G
DescriptionIGBT MODULE NPT DUAL SP6
ManufacturerMicrosemi Power Products Group
APTGF300DU120G datasheet
 


Specifications of APTGF300DU120G

Igbt TypeNPTConfigurationDual, Common Source
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.9V @ 15V, 300A
Current - Collector (ic) (max)400ACurrent - Collector Cutoff (max)500µA
Input Capacitance (cies) @ Vce21nF @ 25VPower - Max1780W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Dual Common Source
NPT IGBT Power Module
C1
C2
Q1
G1
E1
E
G1
C1
E
E1
E2
G2
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF300DU120G
V
I
Application
AC Switches
Switched Mode Power Supplies
Q2
Uninterruptible Power Supplies
G2
Features
Non Punch Through (NPT) FAST IGBT
E2
-
-
-
-
-
-
-
-
Kelvin emitter for easy drive
Very low stray inductance
-
-
C2
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
Low profile
RoHS Compliant
Max ratings
1200
T
= 25°C
400
c
T
= 80°C
300
c
T
= 25°C
600
c
±20
T
= 25°C
1780
c
T
= 150°C
600A @ 1200V
j
www.microsemi.com
= 1200V
CES
= 300A @ Tc = 80°C
C
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
M5 power connectors
of V
C
CEsat
Unit
V
A
V
W
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APTGF300DU120G Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF300DU120G V I Application • AC Switches • Switched Mode Power Supplies • ...

  • Page 2

    ... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr Er Reverse Recovery Energy APTGF300DU120G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V ...

  • Page 3

    ... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF300DU120G Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...

  • Page 4

    ... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 0.07 0.9 0.06 0.7 0.05 0.5 0.04 0.03 0.3 0.02 0.1 0.01 0.05 0 0.00001 0.0001 APTGF300DU120G =15V) GE 600 T J 500 400 300 200 T =125°C J 100 Energy losses vs Collector Current ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF300DU120G Forward Characteristic of diode 600 ...