APTGF300DU120G Microsemi Power Products Group, APTGF300DU120G Datasheet

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APTGF300DU120G

Manufacturer Part Number
APTGF300DU120G
Description
IGBT MODULE NPT DUAL SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF300DU120G

Igbt Type
NPT
Configuration
Dual, Common Source
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 300A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
21nF @ 25V
Power - Max
1780W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
G1
E1
V
V
NPT IGBT Power Module
I
P
I
CM
CES
C
GE
D
G1
E1
E2
G2
Dual Common Source
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
C1
Q1
C1
Parameter
E
C2
E
Q2
C2
www.microsemi.com
G2
E2
T
T
T
T
T
c
c
c
c
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Benefits
Application
Features
600A @ 1200V
Max ratings
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Non Punch Through (NPT) FAST IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
Low profile
RoHS Compliant
1200
1780
APTGF300DU120G
-
-
-
-
-
-
-
-
-
-
400
300
600
±20
V
I
C
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
M5 power connectors
CES
= 300A @ Tc = 80°C
= 1200V
Unit
W
V
A
V
C
of V
CEsat
1 - 5

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APTGF300DU120G Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF300DU120G V I Application • AC Switches • Switched Mode Power Supplies • ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr Er Reverse Recovery Energy APTGF300DU120G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V ...

Page 3

... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF300DU120G Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...

Page 4

... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 0.07 0.9 0.06 0.7 0.05 0.5 0.04 0.03 0.3 0.02 0.1 0.01 0.05 0 0.00001 0.0001 APTGF300DU120G =15V) GE 600 T J 500 400 300 200 T =125°C J 100 Energy losses vs Collector Current ...

Page 5

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF300DU120G Forward Characteristic of diode 600 ...

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