APTGF300DU120G Microsemi Power Products Group, APTGF300DU120G Datasheet - Page 5

• Manufacturer Part Number: APTGF300DU120G
• Description: IGBT MODULE NPT DUAL SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF300DU120G

• Igbt Type: NPT
• Configuration: Dual, Common Source
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 300A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 21nF @ 25V
• Power - Max: 1780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.14
0.12
0.08
0.06
0.04
0.02
100
80
60
40
20
0.1
0.00001
0
0
Operating Frequency vs Collector Current
0
0.9
0.3
0.05
0.7
0.5
0.1
switching
50
hard
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
100 150 200 250 300 350
ZVS
0.0001
I
C
(A)
ZCS
V
D=50%
R
T
T
CE
J
C
G
=125°C
=75°C
=3 Ω
=600V
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
Single Pulse
0.01
600
500
400
300
200
100
0
0
APTGF300DU120G
0.1
Forward Characteristic of diode
0.5
1
V
T
1.5
F
J
=125°C
(V)
1
2
T
Diode
J
=25°C
2.5
10
3
5 - 5