APTGF150H120G

Manufacturer Part NumberAPTGF150H120G
DescriptionIGBT MODULE NPT FULL BRIDGE SP6
ManufacturerMicrosemi Power Products Group
APTGF150H120G datasheet
 

Specifications of APTGF150H120G

Igbt TypeNPTConfigurationFull Bridge Inverter
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.7V @ 15V, 150A
Current - Collector (ic) (max)200ACurrent - Collector Cutoff (max)350µA
Input Capacitance (cies) @ Vce10.2nF @ 25VPower - Max961W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesAPTGF150H120GMP
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
Page 1/5

Download datasheet (250Kb)Embed
Next
Full - Bridge
NPT IGBT Power Module
VBUS
Q1
Q3
G1
E1
OUT1
OUT2
Q2
Q4
G2
E2
0/VBUS
OUT1
G1
VBUS
0/VBUS
E1
E3
G3
OUT2
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF150H120G
V
= 1200V
CES
I
= 150A @ Tc = 80°C
C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
G3
Features
Non Punch Through (NPT) FAST IGBT
E3
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
G4
-
Low diode VF
-
Low leakage current
E4
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
G2
operation
E2
Stable temperature behavior
Very rugged
E4
Direct mounting to heatsink (isolated package)
G4
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
Max ratings
1200
T
= 25°C
200
c
T
= 80°C
150
c
T
= 25°C
300
c
±20
T
= 25°C
961
c
T
= 150°C
300A @ 1200V
j
www.microsemi.com
Unit
V
A
V
W
1 - 5

APTGF150H120G Summary of contents

  • Page 1

    ... V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF150H120G V = 1200V CES I = 150A @ Tc = 80°C C Application • Welding converters • ...

  • Page 2

    ... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse recovery Energy r APTGF150H120G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

  • Page 3

    ... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF150H120G Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...

  • Page 4

    ... Reverse Bias Safe Operating Area 350 Eon 300 250 200 150 V GE 100 Eoff T =125° =5.6 Ω Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) www.microsemi.com APTGF150H120G Output Characteristics = 125°C V =15V GE V =20V GE V =12V 600V = 15V Eon ...

  • Page 5

    ... U.S and Foreign patents pending. All Rights Reserved. Forward Characteristic of diode 300 V =600V CE D=50% 250 R =5.6 Ω =125°C 200 J T =75°C C 150 100 120 160 200 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) www.microsemi.com APTGF150H120G T =125° =25°C J 0.5 1 1 (V) F Diode ...