APTGF150H120G Microsemi Power Products Group, APTGF150H120G Datasheet
APTGF150H120G
Specifications of APTGF150H120G
Related parts for APTGF150H120G
APTGF150H120G Summary of contents
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... V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF150H120G V = 1200V CES I = 150A @ Tc = 80°C C Application • Welding converters • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse recovery Energy r APTGF150H120G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...
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... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF150H120G Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...
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... Reverse Bias Safe Operating Area 350 Eon 300 250 200 150 V GE 100 Eoff T =125° =5.6 Ω Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) www.microsemi.com APTGF150H120G Output Characteristics = 125°C V =15V GE V =20V GE V =12V 600V = 15V Eon ...
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... U.S and Foreign patents pending. All Rights Reserved. Forward Characteristic of diode 300 V =600V CE D=50% 250 R =5.6 Ω =125°C 200 J T =75°C C 150 100 120 160 200 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) www.microsemi.com APTGF150H120G T =125° =25°C J 0.5 1 1 (V) F Diode ...