APTGF150H120G Microsemi Power Products Group, APTGF150H120G Datasheet - Page 4

• Manufacturer Part Number: APTGF150H120G
• Description: IGBT MODULE NPT FULL BRIDGE SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF150H120G

• Igbt Type: NPT
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 150A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 10.2nF @ 25V
• Power - Max: 961W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGF150H120GMP

Typical Performance Curve
300
250
200
150
100
300
250
200
150
100
0.14
0.12
0.08
0.06
0.04
0.02
70
60
50
40
30
20
10
50
Switching Energy Losses vs Gate Resistance
50
0
0.1
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
GE
J
5
= 150A
0.05
Output Characteristics (V
= 125°C
0.3
0.1
0.9
0.7
0.5
= 600V
=15V
6
1
10 15 20 25 30 35 40 45 50
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
2
0.0001
8
V
T
V
T
CE
J
GE
=125°C
J
3
=25°C
(V)
(V)
T
9
J
=125°C
T
J
=25°C
4
10
Eon
GE
Eoff
=15V)
rectangular Pulse Duration (Seconds)
0.001
Er
5
11
Single Pulse
12
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6
0.01
350
300
250
200
150
100
300
250
200
150
100
56
48
40
32
24
16
50
8
0
50
0
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
CE
GE
J
G
GE
J
G
J
= 125°C
=125°C
= 5.6 Ω
=5.6 Ω
0.1
= 125°C
= 600V
= 15V
=15V
50
300
APTGF150H120G
1
Output Characteristics
100
2
600
I
C
V
150
(A)
CE
V
V
GE
Eoff
3
CE
(V)
1
=20V
900
(V)
200
IGBT
4
1200
Eon
V
250
V
GE
V
Eoff
GE
5
GE
=15V
=9V
Er
=12V
1500
10
300
6
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