APTGF150H120G Microsemi Power Products Group, APTGF150H120G Datasheet - Page 5

• Manufacturer Part Number: APTGF150H120G
• Description: IGBT MODULE NPT FULL BRIDGE SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF150H120G

• Igbt Type: NPT
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 150A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 10.2nF @ 25V
• Power - Max: 961W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGF150H120GMP

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.25
0.15
0.05
100
90
80
70
60
50
40
30
20
10
0.2
0.1
0.00001
0
0
Operating Frequency vs Collector Current
0
switching
0.05
0.9
0.3
0.7
0.5
0.1
hard
40
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZCS
80
0.0001
I
C
(A)
ZVS
120
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=5.6 Ω
160
=600V
0.001
rectangular Pulse Duration (Seconds)
200
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Single Pulse
0.01
300
250
200
150
100
50
0
0
Forward Characteristic of diode
0.1
0.5
APTGF150H120G
1
V
T
1.5
F
J
=125°C
(V)
1
2
T
Diode
J
=25°C
2.5
10
3
5 - 5