APTGL475A120D3G Microsemi Power Products Group, APTGL475A120D3G Datasheet

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APTGL475A120D3G

Manufacturer Part Number
APTGL475A120D3G
Description
MOSFET MODULE 4PHASE LEG D3
Manufacturer
Microsemi Power Products Group

Specifications of APTGL475A120D3G

Igbt Type
Trench and Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 400A
Current - Collector (ic) (max)
610A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
24.6nF @ 25V
Power - Max
2080W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
V
I
P
I
CM
CES
C
GE
D
Trench + Field Stop IGBT4
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
4
5
6
7
Power Module
Phase leg
Q1
Q2
Parameter
1
3
2
www.microsemi.com
T
T
T
T
T
C
C
C
C
j
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
800A @ 1100V
APTGL475A120D3G
Max ratings
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Trench + Field Stop IGBT 4 Technology
Kelvin emitter for easy drive
High level of integration
M6 power connectors
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
1200
2080
610
475
900
±20
-
-
-
-
-
-
V
I
C
CES
Low voltage drop
Low leakage current
Low switching losses
Soft recovery parallel diodes
Low diode VF
RBSOA and SCSOA rated
= 475A @ Tc = 80°C
= 1200V
Unit
W
V
A
V
C
of V
CEsat
1 - 5

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