APTGT200H120G

Manufacturer Part NumberAPTGT200H120G
DescriptionIGBT MOD TRENCH FULL BRIDGE SP6
ManufacturerMicrosemi Power Products Group
APTGT200H120G datasheets

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Specifications of APTGT200H120G

Igbt TypeTrench and Field StopConfigurationFull Bridge Inverter
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic2.1V @ 15V, 200A
Current - Collector (ic) (max)280ACurrent - Collector Cutoff (max)350µA
Input Capacitance (cies) @ Vce14nF @ 25VPower - Max890W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Thermal and package characteristics
Symbol Characteristic
R
Junction to Case Thermal Resistance
thJC
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
ISOL
T
Operating junction temperature range
J
T
Storage Temperature Range
STG
T
Operating Case Temperature
C
Torque
Mounting torque
Wt
Package Weight
SP6 Package outline
(dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTGT200H120G
Min
IGBT
Diode
2500
-40
-40
-40
To heatsink
M6
3
For terminals
M5
2
www.microsemi.com
Typ
Max
Unit
0.14
°C/W
0.25
V
150
°C
125
100
5
N.m
3.5
280
g
3 - 5