APTGT200H120G

Manufacturer Part NumberAPTGT200H120G
DescriptionIGBT MOD TRENCH FULL BRIDGE SP6
ManufacturerMicrosemi Power Products Group
APTGT200H120G datasheets

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Specifications of APTGT200H120G

Igbt TypeTrench and Field StopConfigurationFull Bridge Inverter
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic2.1V @ 15V, 200A
Current - Collector (ic) (max)280ACurrent - Collector Cutoff (max)350µA
Input Capacitance (cies) @ Vce14nF @ 25VPower - Max890W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Typical Performance Curve
Output Characteristics (V
400
T
=25°C
J
300
200
100
0
0
1
2
V
(V)
CE
Transfert Characteristics
400
350
T
300
250
200
150
100
T
=125°C
J
50
0
5
6
7
8
V
GE
Switching Energy Losses vs Gate Resistance
50
V
= 600V
CE
V
=15V
40
GE
I
= 200A
C
T
= 125°C
J
30
20
10
0
0
4
8
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.14
0.9
0.12
0.7
0.1
0.5
0.08
0.06
0.3
0.04
0.1
0.02
0.05
0
0.00001
0.0001
APTGT200H120G
=15V)
GE
400
T
T
=125°C
300
J
200
100
0
3
4
0
Energy losses vs Collector Current
50
V
=25°C
J
V
40
R
T
=125°C
T
J
30
20
10
0
0
50 100 150 200 250 300 350 400
9
10
11
12
(V)
Reverse Bias Safe Operating Area
450
Eon
400
350
300
Eoff
250
200
Er
150
V
GE
T
100
J
R
G
50
0
12
16
20
0
IGBT
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
www.microsemi.com
Output Characteristics
= 125°C
J
V
=17V
V
=13V
GE
GE
V
=15V
GE
V
=9V
GE
1
2
3
4
V
(V)
CE
= 600V
Eon
CE
= 15V
GE
Eoff
= 2.7Ω
G
= 125°C
J
Er
Eon
I
(A)
C
=15V
=125°C
=2.7 Ω
300
600
900
1200
1500
V
(V)
CE
1
10
4 - 5

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