IXGN80N60A2 IXYS, IXGN80N60A2 Datasheet
IXGN80N60A2
Manufacturer Part Number
IXGN80N60A2
Description
IGBT 600V 160A SOT-227B
Manufacturer
IXYS
Datasheet
1.IXGN80N60A2.pdf
(2 pages)
Specifications of IXGN80N60A2
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.35V @ 15V, 80A
Current - Collector (ic) (max)
160A
Current - Collector Cutoff (max)
25µA
Power - Max
625W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Input Capacitance (cies) @ Vce
-
IGBT
Optimized for Switching
up to 5 kHz
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
V
M
Weight
© 2004 IXYS All rights reserved
Symbol
V
I
I
V
CM
C25
C110
F110
CES
GES
J
JM
stg
CGR
GEM
C
ISOL
CES
GES
GE(th)
CE(sat)
d
T
T
J
J
Test Conditions
= 25°C to 150°C
= 25°C to 150°C; R
Continuous
Transient
T
T
T
T
V
Clamped inductive load
T
50/60 Hz
I
Mounting torque
Terminal connection torque (M4)
Test Conditions
I
V
Note 3
V
I
ISOL
C
C
C
C
C
C
C
GE
CE
CE
= 25°C
= 110°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
≤ 1 mA
= 1 mA, V
= V
= 0 V, V
= I
C110
CES,
, V
V
GE
VJ
GE
GE
CE
= 125°C, R
= ±20 V
= 0 V
= 15 V, Note 1
= V
GE
GE
IXGN80N60A2D1
t = 1 min
t = 1 s
= 1 MΩ
G
= 2.0 Ω
80N60A2
80N60A2D1
(T
J
= 25°C, unless otherwise specified)
Advanced Technical Data
IXGN 80N60A2
IXGN 80N60A2D1
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
CM
typ.
1.2
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
= 160
2500
3000
600
600
±20
±30
160
320
625
150
E
80
60
CES
30
max.
±400
1.35
650
5.5
25
°C
°C
°C
V~
V~
W
µA
µA
nA
V
V
V
V
A
A
A
A
A
g
D1
V
V
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
Features
Applications
Advantages
International standard package
miniBLOC
UL recognized
Aluminium nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Very high current IGBT
Low V
conduction losses
MOS Gate turn-on
- drive simplicity
Low collector-to-case capacitance
(< 50 pF)
Low package inductance (< 5 nH)
- easy to drive and to protect
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Easy to mount with 2 screws
Space savings
High power density
Main or Kelvin Emitter
V
either emitter terminal can be used as
V
I
C25
E153432
CE(sat)
CES
CE(sat)
G
for minimum on-state
=
=
=
E
C
1.35 V
600 V
160 A
DS99180(05/04)
E
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IXGN80N60A2 Summary of contents
Page 1
... Optimized for Switching kHz Symbol Test Conditions 25°C to 150°C CES 25°C to 150°C; R CGR Continuous GES V Transient GEM 25°C C25 110°C C110 110°C IXGN80N60A2D1 F110 25° SSOA 125° (RBSOA) Clamped inductive load 25° stg V 50/ min ISOL I ≤ ...
Page 2
... V (Clamp) > 0 higher T CE CES 3. Parts must be heatsunk for high temperature I IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. ...