IXGN50N60BD2 IXYS, IXGN50N60BD2 Datasheet
IXGN50N60BD2
Specifications of IXGN50N60BD2
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IXGN50N60BD2 Summary of contents
Page 1
... CES I = C25 V = 2.5 V CE(sat 150 ns fi ...BD3 SOT-227B, miniBLOC E 153432 IXGN50N60BD2 Emitter Gate 3 = Collector Diode cathode A IXGN50N60BD3 Emitter/Diode Cathode Gate 3 = Collector Diode anode V A Features A • International standard package W miniBLOC °C • Aluminium nitride isolation - high power dissipation °C • Isolation voltage 3000 V~ ° ...
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... CES J 4.2 0.05 Characteristic Values (T = 25°C, unless otherwise specified) J typ 25° 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGN 50N60BD2 IXGN 50N60BD3 miniBLOC, SOT-227 B max screws (4x) supplied nC Dim. ...
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... GE 13V 80 11V Volts CE Fig. 3. Saturation Voltage Characteristics 100 V = 10V 125° Volts GE Fig. 5. Saturation Voltage Characteristics © 2000 IXYS All rights reserved V = 15V GE 13V 11V 10000 T = 25° IXGN 50N60BD2 IXGN 50N60BD3 200 T = 25°C J 11V V = 15V GE 13V 160 120 80 40 ...
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... C Fig. 7. Dependence =50A 250V 100 150 Q - nanocoulombs g Fig. 9. Gate Charge 1 0.1 0.01 0.001 0.00001 0.0001 Fig. 11. Transient Thermal Resistance © 2000 IXYS All rights reserved (ON (OFF 100 and OFF C 600 100 0.1 200 250 300 0.001 Pulse Width - Seconds IXGN 50N60BD2 ...
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... T VJ Fig. 15 Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.0001 0.00001 0.0001 0.001 Fig. 18 Transient thermal resistance junction to case © 2000 IXYS All rights reserved 4000 T = 100° 300V nC R 3000 I =120A 60A 30A F 2000 1000 0 m 100 ...