IXGN60N60C2D1 IXYS, IXGN60N60C2D1 Datasheet

IGBT 600V 75A SOT-227B

IXGN60N60C2D1

Manufacturer Part Number
IXGN60N60C2D1
Description
IGBT 600V 75A SOT-227B
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheets

Specifications of IXGN60N60C2D1

Configuration
Single
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
650µA
Input Capacitance (cies) @ Vce
4.75nF @ 25V
Power - Max
480W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
100 A
Minimum Operating Temperature
- 55 C
Mounting Style
Screw
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
60
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
35
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.2
Rthjc, Max, Igbt, (°c/w)
0.26
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
0.85
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGN60N60C2D1
Manufacturer:
ELNA
Quantity:
34 000
Part Number:
IXGN60N60C2D1
Quantity:
59
HiPerFAST
with Diode
C2-Class High Speed IGBTs
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
V
M
Weight
Symbol
(T
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
J
JM
stg
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
d
J
= 25°C, Unless Otherwise Specified)
Clamped Inductive Load
I
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
V
T
50/60 Hz
I
Mounting Torque
Terminal Connection Torque (M4)
Test Conditions
C
V
C
ISOL
GE
CE
J
J
C
C
C
C
GE
CE
≤ 1 mA
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C (Limited by Leads)
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250μA, V
= 0V
= 0V, V
= 50A, V
= V
TM
CES
GE
IGBTs
GE
VJ
= ±20V
CE
= 15V, Note 1
= 125°C, R
= V
t = 1 min
t = 1 s
GE
GE
= 1 M
G
= 10
T
T
J
J
Ω
= 125°C
= 125°C
Ω
IXGN60N60C2D1
IXGN60N60C2
E
Min.
3.0
Characteristic Values
60C2
@ V
-55 ... +150
-55 ... +150
Maximum Ratings
I
1.3/11.5
CM
CE
1.5/13
= 100
2500
3000
≤ 600
Typ.
150
1.8
300
480
2.1
600
600
±20
±30
30
60
75
E
±100
650
Max.
5.0
2.5
Nm/lb.in.
60C2D1
Nm/lb.in.
5
mA
V~
V~
°C
μA
nA
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
g
V
I
V
t
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
Features
Applications
Advantages
C110
rr
International Standard Package
miniBLOC
Aluminium Nitride Isolation
- High Power Dissipation
Anti-Parallel Ultra Fast Diode
Isolation Voltage 3000 V~
Low V
Conduction Losses
MOS Gate Turn-on
- Drive Simplicity
Low Collector-to-Case Capacitance
(< 50 pF)
Low Package Inductance (< 5 nH)
- Easy to Drive and to Protect
AC Motor Speed Control
DC Servo and Robot Drives
DC Choppers
Uninterruptible Power Supplies (UPS)
Switch-Mode and Resonant-Mode
Power Supplies
Easy to Mount with 2 Screws
Space Savings
High Power Density
CES
CE(sat)
Main or Kelvin Emitter
Either Emitter Terminal can be used as
E153432
CE(sat)
=
=
≤ ≤ ≤ ≤ ≤
=
G
for Minimum On-State
2.5V
600V
60A
35ns
E
C
DS99177A(01/09)
E

Related parts for IXGN60N60C2D1

IXGN60N60C2D1 Summary of contents

Page 1

... V GE(th CES CE CES 0V ±20V GES 50A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved IXGN60N60C2 IXGN60N60C2D1 E E 60C2 Maximum Ratings 600 Ω 600 GE ±20 ± 300 Ω 100 G CM ≤ 600 @ V CE 480 -55 ... +150 150 -55 ... +150 2500 3000 1 ...

Page 2

... Characteristic Values Min. Typ 150°C 1 100° 30V 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGN60N60C2 IXGN60N60C2D1 SOT-227B miniBLOC Max 150 0.26 °C/W °C/W Max 0.85 °C/W 6,404,065 B1 6,683,344 ...

Page 3

... Volts GE © 2009 IXYS CORPORATION, All Rights Reserved 2 2.5 3 3.5 º 00A C 50A 25A IXGN60N60C2 IXGN60N60C2D1 Fig. 2. Extended Output Characteristics @ 25 deg. C 200 2 Volts CE Fig emperature Dependence 0.9 0.8 0.7 0.6 0 Degrees Centigrade J Fig. 6. Input Admittance 200 1 75 ...

Page 4

... C Fig. 11. Gate Charge 300V 50A 0mA nanoCoulombs G IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions 200 on I off C º º 10,000 1 0000 IXGN60N60C2 IXGN60N60C2D1 Fig. 8. Dependence º 400V Ohms G Fig. 10. Dependence of E off Ohms Ohms - - - - - 400V Degrees Centigrade J Fig. 12. Capacitance Fig ...

Page 5

... I = 30A, 60A, 120A F 110 100 90 80 160 0 200 400 600 -di /dt F Fig. 17. Recorvery Time t -di /dt F 0.01 0.1 0.01 Pulse Width [ s ] IXGN60N60C2 IXGN60N60C2D1 100° 300V 120A, 60A, 30A 1000 0 200 400 A/μs /dt F Fig. 15. Peak Reverse Current I r Versus -di ...

Related keywords