IXGN50N60B IXYS, IXGN50N60B Datasheet
IXGN50N60B
Specifications of IXGN50N60B
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IXGN50N60B Summary of contents
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... GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE © 2003 IXYS All rights reserved IXGN 50N60B E Maximum Ratings 600 = 1 M 600 200 = 100 0.8 V CES 300 -55 ... +150 150 -55 ... +150 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 2500 30 300 Characteristic Values ( unless otherwise specified) J min ...
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... higher T or increased off R thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ 4100 310 95 160 = 0 ...
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... V - Volts CE Figure 5. Admittance Curves 100 V = 10V 125° Volts GE © 2003 IXYS All rights reserved Figure 2. Extended Output Characteristics 200 V = 15V GE 13V 11V 160 9V 7V 120 Figure 4. Temperature Dependence of V 1.6 9V 1.4 1.2 7V 1.0 0.8 5V 0.6 0 Figure 6. Capacitance Curves 10000 ...
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... D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: and Figure 8. Dependence OFF (ON (OFF) 6 ...