IXGN400N30A3 IXYS, IXGN400N30A3 Datasheet
IXGN400N30A3
Specifications of IXGN400N30A3
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IXGN400N30A3 Summary of contents
Page 1
... CES CE CES 0V ±20V GES 100A 15V, Note 1 CE(sat 400A C © 2009 IXYS CORPORATION, All Rights Reserved IXGN400N30A3 Maximum Ratings 300 = 1MΩ 300 GE ±20 ±30 400 200 200 1200 = 1Ω 400 0.8 • V CES 735 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 ...
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... CES 185 45 45 210 107 47 53 240 315 0.05 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGN400N30A3 SOT-227B miniBLOC (IXGN) Max 0.17 °C/W °C/W 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 ...
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... C 2.4 2 200A C 1.6 1 100A C 0.8 75 100 125 150 350 300 250 25ºC - 40ºC 200 150 100 50 5.6 6.0 6.4 6.8 IXGN400N30A3 Fig. 2. Output Characteristics @ T = 125º 0.0 0.2 0.4 0.6 0.8 1 Volts CE Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage I = 300A C 200A 100A ...
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... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 100,000 f 10,000 1,000 100 0 400 500 600 Fig. 10. Maximum Transient Thermal Impedance 1.000 0.100 0.010 0.001 225 275 325 0.00001 IXGN400N30A3 Fig. 8. Capacitance = 1 MHz Volts CE 0.0001 0.001 0.01 0.1 Pulse Width - Seconds C ies C oes C res ...
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... GE 900 800 250 700 = 100A 200 600 500 150 400 300 100 200 50 100 IXGN400N30A3 Fig. 12. Resistive Turn-on Rise Time vs. Collector Current T = 125º 1Ω 15V 240V 25ºC J 100 120 140 160 180 200 220 I - Amperes C Fig ...