IXGN200N60 IXYS, IXGN200N60 Datasheet

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IXGN200N60

Manufacturer Part Number
IXGN200N60
Description
IGBT 300A 600V SOT-227B
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet

Specifications of IXGN200N60

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 100A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
200µA
Input Capacitance (cies) @ Vce
9nF @ 25V
Power - Max
600W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGN200N60A
Manufacturer:
IXYS
Quantity:
27
© 2000 IXYS All rights reserved
HiPerFAST
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
V
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
BV
V
I
I
V
C25
C90
CM
CES
GES
J
JM
stg
CGR
C
CES
GES
GEM
ISOL
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 mH
T
50/60 Hz
I
Mounting torque
Terminal connection torque (M4)
Test Conditions
I
I
V
V
V
I
ISOL
C
C
C
C
C
C
C
J
J
GE
CE
CE
GE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
£ 1 mA
= 250 mA, V
= 10 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
TM
GE
VJ
GE
CES
= 125°C, R
= 15 V
= ±20 V
CE
GE
IGBT
= V
= 0 V
t = 1 min
t = 1 s
GE
GE
= 1 MW
G
= 22 W
T
T
200N60
200N60A
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
min.
600
IXGN 200N60
IXGN 200N60A
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
CM
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
= 100
2500
3000
600
600
±20
±30
200
100
300
600
150
CES
30
E
max.
±400
200
2.5
2.7
6
2
mA
V~
V~
mA
nA
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
g
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
 either emitter terminal can be used as
Features
Applications
Advantages
International standard package
miniBLOC (ISOTOP compatible)
Aluminium nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Very high current, fast switching IGBT
Low V
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Low collector-to-case capacitance
(< 50 pF)
Low package inductance (< 5 nH)
- easy to drive and to protect
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Easy to mount with 2 screws
Space savings
High power density
Main or Kelvin Emitter
600 V
600 V
V
CES
CE(sat)
G
200 A 2.5 V
200 A 2.7 V
E 
I
C25
C
E 
92776I (1/98)
V
CE(sat)
1 - 4

Related parts for IXGN200N60

IXGN200N60 Summary of contents

Page 1

... V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGN 200N60 IXGN 200N60A E Maximum Ratings 600 = 1 MW 600 GE ±20 ±30 200 100 300 = 100 0.8 V CES 600 -55 ...

Page 2

... W off 780 250 , CES 14.4 G 0.05 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGN200N60A miniBLOC, SOT-227 B max screws (4x) supplied nC Dim. Millimeter nC Min. Max. A 31.50 31.88 B 7.80 8 ...

Page 3

... Volts GE Fig. 5. Turn-off Safe Operating Area © 2000 IXYS All rights reserved IXGN200N60 Fig. 2. Extended Output Characteristics Fig. 4. Temperature Dependence of V 10000 = 25° Fig. 6. Temperature Dependence of BV IXGN200N60A 400 T = 25° 15V GE 13V 320 240 160 Volts CE 1 15V GE 1 200A C 1 ...

Page 4

... IXYS All rights reserved IXGN200N60 (ON 200 250 Fig. 8. Dependence of tfi and E OFF C 400 100 10 1 0.1 500 600 Fig. 10. Junction Capacitance Curves 0.01 0.1 Pulse Width - Seconds IXGN200N60A 125°C (OFF 200A 100A (ON 50A (ON (ON Ohms G OFF T = 125° ...

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