IXGN400N60A3 IXYS, IXGN400N60A3 Datasheet

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IXGN400N60A3

Manufacturer Part Number
IXGN400N60A3
Description
IGBT 400A 600V SOT-227B
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGN400N60A3

Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.25V @ 15V, 100A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
32nF @ 25V
Power - Max
830W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
400
Ic110, Tc=110°c, Igbt, (a)
190
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.25
Rthjc, Max, Igbt, (°c/w)
0.15
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GenX3
Ultra-Low-Vsat PT IGBT for
up to 5kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
LRMS
CM
CES
GES
J
JM
stg
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
Continuous
Transient
T
T
Terminal Current Limit
T
V
Clamped Inductive Load
T
50/60Hz
I
Mounting Torque
I
I
V
V
I
I
TM
Test Conditions
T
T
Test Conditions
Terminal Connection Torque (M4)
ISOL
C
C
C
C
C
C
C
C
J
J
GE
CE
CE
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C (Chip Capability)
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
≤ 1mA
= 1mA, V
= 4mA, V
= V
= 0V, V
= 100A, V
= 400A
600V IGBT
CES
, V
VJ
GE
GE
CE
= 125°C, R
GE
= ±20V
GE
= 0V
= V
= 0V
= 15V, Note 1
GE
t = 1min
t = 1s
GE
= 1MΩ
G
= 0.5Ω
T
J
= 125°C
IXGN400N60A3
@ 0.8 • V
-55 ... +150
-55 ... +150
600
Characteristic Values
3.0
Min.
Maximum Ratings
I
CM
1.3/11.5
1.5/13
= 400
2500
3000
600
600
±20
±30
400
190
200
830
150
800
CES
30
1.55
1.05
Typ.
E
±400 nA
Nm/lb.in.
Nm/lb.in.
1.25
250 µA
2.5 mA
Max.
5.0
V~
V~
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
V
V
V
A
g
V
I
V
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
Features
Advantages
Applications
C25
Optimized for Low Conduction losses
Square RBSOA
High Current Capability
Isolation Voltage 3000
International Standard Package
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
Main or Kelvin Emitter
either emitter terminal can be used as
E153432
≤ ≤ ≤ ≤ ≤ 1.25V
= 600V
= 400A
G
E
C
DS99577B(07/09)
V~
E

Related parts for IXGN400N60A3

IXGN400N60A3 Summary of contents

Page 1

... CES CE CES 0V ±20V GES 100A 15V, Note 1 CE(sat 400A C © 2009 IXYS CORPORATION, All Rights Reserved IXGN400N60A3 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 400 190 200 800 = 0.5Ω 400 0.8 • V CES 830 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1 ...

Page 2

... V 120 CE CES 300 25 95 170 270 27 97 190 650 0.05 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGN400N60A3 SOT-227B miniBLOC (IXGN) Max 0.15 °C/W °C/W 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 ...

Page 3

... IXYS CORPORATION, All Rights Reserved 7V 5V 1.6 2.0 2.4 2.8 on CE(sat 200A 100A C 75 100 125 150 5.5 6.0 6.5 IXGN400N60A3 Fig. 2. Output Characteristics @ 125ºC 200 180 160 140 120 100 0.0 0.2 0.4 0.6 0 Volts CE Fig. 4. Collector-to-Emitter Voltage vs ...

Page 4

... C ies 0.100 C oes 0.010 C res 0.001 IXGN400N60A3 Fig. 8. Reverse-Bias Safe Operating Area T = 125º 0.5Ω < 10V / ns 0 100 150 200 250 300 350 400 V - Volts CE Fig. 10. Maximum Transient Thermal Impedance ...

Page 5

... T = 125ºC J 180 550 170 500 160 450 150 140 400 240 260 280 300 0.5 IXGN400N60A3 Fig. 12. Resistive Turn-on Rise Time vs. Collector Current R = 0.5 Ω 15V 400V 125º 120 140 160 180 200 220 ...

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