IXGN82N120C3H1 IXYS, IXGN82N120C3H1 Datasheet
IXGN82N120C3H1
Manufacturer Part Number
IXGN82N120C3H1
Description
IGBT 1200V 58A GENX3 SOT-227B
Manufacturer
IXYS
Series
GenX3™r
Datasheet
1.IXGN82N120C3H1.pdf
(2 pages)
Specifications of IXGN82N120C3H1
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 82A
Current - Collector (ic) (max)
130A
Current - Collector Cutoff (max)
50µA
Input Capacitance (cies) @ Vce
7.9nF @ 25V
Power - Max
595W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
130
Ic110, Tc=110°c, Igbt, (a)
58
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.9
Tfi, Typ, Tj=25°c, Igbt, (ns)
100
Eoff, Typ, Tj=125°c, Igbt, (mj)
4
Rthjc, Max, Igbt, (°c/w)
0.21
If, Tj=110°c, Diode, (a)
42
Rthjc, Max, Diode, (ºc/w)
0.42
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Details
GenX3
IGBT w/ Diode
High-Speed PT IGBT for
20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
V
M
Weight
Symbol
(T
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
CES
GES
J
JM
stg
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
d
J
= 25°C, Unless Otherwise Specified)
TM
Terminal Connection Torque
Test Conditions
Continuous
Transient
T
T
T
T
V
Clamped Inductive Load
T
50/60Hz
I
Mounting Torque
I
V
V
I
T
T
Test Conditions
ISOL
C
C
C
C
C
C
C
J
J
GE
CE
CE
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
≤ 1mA
1200V
= 1mA, V
= V
= 0V, V
= 82A, V
CES
, V
VJ
GE
GE
CE
GE
= 125°C, R
= ± 20V
= 15V, Note 2
= V
= 0V, Note 1
GE
t = 1min
t = 1s
GE
= 1MΩ
G
= 3Ω
Advance Technical Information
T
J
= 125°C
IXGN82N120C3H1
Characteristic Values
Min.
3.0
-55 ... +150
-55 ... +150
V
Maximum Ratings
I
CE
CM
1.3/11.5
≤ V
1.5/13
= 164
1200
1200
2500
3000
±20
±30
595
150
130
500
CES
Typ.
42
30
58
3.3
±200 nA
Max.
Nm/lb.in.
Nm/lb.in.
5.0
50
3.9
6 mA
V~
μA
V~
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
A
V
g
V
I
V
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
Features
Advantages
Applications
C110
Optimized for Low Switching Losses
Square RBSOA
High Current Capability
Isolation Voltage 2500
Anti-Parallel Ultra Fast Diode
International Standard Package
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
SMPS
PFC Circuits
Welding Machines
Lamp Ballasts
CES
CE(sat)
Main or Kelvin Emitter
either emitter terminal can be used as
E153432
G
≤ ≤ ≤ ≤ ≤
= 1200V
= 58A
E
£
3.9V
C
V~
DS100171(7/09)
E
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IXGN82N120C3H1 Summary of contents
Page 1
... 0V, Note 1 CES CE CES 0V ± 20V GES 82A 15V, Note 2 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGN82N120C3H1 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ±30 130 58 42 500 = 3Ω 164 G CM ≤ CES 595 -55 ... +150 150 -55 ... +150 2500 3000 1 ...
Page 2
... Characteristic Values Min. Typ 150°C 1 100°C J 140 (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGN82N120C3H1 SOT-227B miniBLOC (IXGN) Max 5 0.21 °C/W °C/W Max. 2 0.42 °C ...