IXDN55N120D1 IXYS, IXDN55N120D1 Datasheet
IXDN55N120D1
Manufacturer Part Number
IXDN55N120D1
Description
IGBT 1200V 100A W/DIODE SOT-227B
Manufacturer
IXYS
Datasheet
1.IXDN55N120D1.pdf
(4 pages)
Specifications of IXDN55N120D1
Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 55A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
3.8mA
Input Capacitance (cies) @ Vce
3.3nF @ 25V
Power - Max
450W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
100
Ic90, Tc=90°c, Igbt, (a)
62
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.8
Tfi, Typ, Igbt, (ns)
70
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.2
Rthjc, Max, Igbt, (°c/w)
0.28
If, Tc=90°c, Diode, (a)
60
Rthjc, Max, Diode, (k/w)
0.6
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXDN55N120D1
Manufacturer:
IXYS
Quantity:
27
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
V
V
I
I
I
RBSOA
t
(SCSOA)
P
V
T
T
M
Weight
Symbol
V
V
I
I
V
© 2002 IXYS All rights reserved
C25
C90
CM
CES
GES
SC
J
stg
CES
CGR
GES
GEM
C
ISOL
(BR)CES
GE(th)
CE(sat)
d
Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 µH
V
R
T
50/60 Hz; I
Mounting torque
Terminal connection torque (M4)
Conditions
V
I
V
V
I
C
C
J
J
C
C
C
C
GE
GE
G
GE
CE
CE
= 2 mA, V
= 55 A, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 90°C, t
= 25°C
= 22 Ω, non repetitive
= V
= 0 V, V
= ±15 V, T
= ±15 V, V
= 0 V
CES
ISOL
GE
p
GE
CE
= 1 ms
= 15 V
J
≤ 1 mA
= V
= ± 20 V
CE
= 125°C, R
= V
GE
CES
T
T
IGBT
Diode
GE
J
J
, T
= 25°C
= 125°C
= 20 kΩ
J
G
= 125°C
= 22 Ω
(T
J
= 25°C, unless otherwise specified)
1200
min.
4.5
Characteristic Values
-40 ... +150
-40 ... +150
V
Maximum Ratings
CEK
I
CM
typ.
2.3
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
6
< V
= 100
1200
2500
1200
±20
±30
100
124
450
220
G
CES
62
10
30
max.
± 500 nA
6.5
3.8 mA
2.8
E
C
mA
V~
µs
°C
°C
W
W
V
V
V
V
A
A
A
A
V
V
V
g
V
I
V
miniBLOC, SOT-227 B
E = Emitter ①,
G = Gate,
① Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
●
●
●
●
●
●
●
●
●
Advantages
●
●
●
Typical Applications
●
●
●
●
●
C25
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard package
miniBLOC
Space savings
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Easy to mount with 2 screws
High power density
CES
CE(sat) typ
E153432
IXDN 55N120 D1
= 1200 V
= 100 A
= 2.3 V
C = Collector
E = Emitter ①
G
C
E
E
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IXDN55N120D1 Summary of contents
Page 1
... V (BR)CES mA GE(th CES CE CES ± GES CE(sat © 2002 IXYS All rights reserved G Maximum Ratings 1200 = 20 kΩ 1200 GE ±20 ±30 100 62 124 = 22 Ω 100 < V CEK CES , T = 125° 450 220 2500 -40 ... +150 -40 ... +150 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Characteristic Values (T = 25° ...
Page 2
... A/µ 125° -di /dt = 100 A/µ thJC miniBLOC, SOT-227 B M4 screws (4x) supplied © 2002 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 3300 500 220 = 0.5 V 240 CE CES 100 70 = 125°C J 500 70 8.4 6 ...
Page 3
... Fig. 1 Typ. output characteristics 120 V = 20V 25°C J 100 Fig. 3 Typ. transfer characteristics 600V 50A 100 150 Fig. 5 Typ. turn on gate charge © 2002 IXYS All rights reserved V =17V GE 15V I C 13V 11V 9V 2.5 3 200 250 IXDN 55N120 D1 120 T = 125° 100 0.0 ...
Page 4
... Fig. 9 Typ. turn on energy and switching times versus gate resistor 120 A 100 22Ω 125° < V CEK CES 200 400 600 800 1000 1200 Fig. 11 Reverse biased safe operating area RBSOA © 2002 IXYS All rights reserved 120 off 600V ±15V 22Ω 125° 100 240 t ...