IXGN200N60B IXYS, IXGN200N60B Datasheet
IXGN200N60B
Specifications of IXGN200N60B
Related parts for IXGN200N60B
IXGN200N60B Summary of contents
Page 1
... CES CE CES ± GES CE(sat) C C90 GE © 2004 IXYS All rights reserved IXGN 200N60B E Maximum Ratings 600 = 1 MΩ 600 ±20 ±30 200 100 120 400 = 2.4 Ω 200 0.8 V CES 600 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. ...
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... CE E higher T or increased R off J R thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min. ...
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... Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 3.6 3.4 3 150A C 100A 2.8 50A 2.6 2.4 2.2 2 1.8 1 Volts G E © 2004 IXYS All rights reserved º C 300 = 15V 13V 250 11V 9V 200 150 7V 100 50 5V 1.6 1.8 2 2.2 2.4 º C 1.2 = 15V 1.2 13V 1 ...
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... C fi 100A T = 125ºC J 500 V = 15V 480V CE 400 300 I = 100A C 50A 200 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. 100 120 140 160 180 C º C º 100 G 350 300 250 200 150 100 IXGN Fig ...
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... V 200 150 I = 100A C 50A 100 Degrees Centigrade J Fig. 15. Capacitance 100000 MHz 10000 1000 C 100 Volts 0.1 0.01 1 © 2004 IXYS All rights reserved 2.7Ω 15V 480V 105 115 125 220 200 180 C ies 160 140 120 100 C oes res Fig. 17. Maxim um Transient Therm al Resistance ...