MKI50-06A7

Manufacturer Part NumberMKI50-06A7
DescriptionMOD IGBT H-BRIDGE 600V 72A E2
ManufacturerIXYS
MKI50-06A7 datasheets

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Specifications of MKI50-06A7

Igbt TypeNPTConfigurationFull Bridge Inverter
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.4V @ 15V, 50A
Current - Collector (ic) (max)72ACurrent - Collector Cutoff (max)600µA
Input Capacitance (cies) @ Vce2.8nF @ 25VPower - Max225W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseE2
Vces, (v)600Ic25, Tc = 25°c, Igbt, (a)72
Ic80, Tc = 80°c, Igbt, (a)50Vce(sat), Typ, Tj = 25°c, Igbt, (v)1.9
Eoff, Typ, Tj = 125°c, Igbt, (mj)1.7Rthjc, Max, Igbt, (k/w)0.55
If25, Tc = 25°c, Diode, (a)72If80, Tc = 80°c, Diode, (a)45
Rthjc, Max, Diode, (k/w)1.19Package StyleE2
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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IGBT Modules
H-Bridge
Short Circuit SOA Capability
Square RBSOA
Type
NTC - Option
MKI 50-06 A7
without NTC
MKI 50-06 A7T
with NTC
IGBTs
Symbol
Conditions
V
T
= 25°C to 150°C
CES
VJ
V
GES
I
T
= 25°C
C25
C
I
T
= 80°C
C80
C
= ± 15 V; R
= 22 Ω; T
RBSOA
V
GE
G
Clamped inductive load; L = 100 µH
= ± 15 V; R
t
V
= V
; V
GE
SC
CE
CES
(SCSOA)
non-repetitive
P
T
= 25°C
tot
C
Symbol
Conditions
V
I
= 50 A; V
= 15 V; T
CE(sat)
C
GE
V
I
= 1 mA; V
= V
GE(th)
C
GE
CE
I
V
= V
; V
= 0 V; T
CES
CE
CES
GE
T
= ± 20 V
I
V
= 0 V; V
GES
CE
GE
t
d(on)
t
Inductive load, T
r
VJ
t
V
= 300 V; I
= 50 A
d(off)
t
CE
C
= 22 Ω
= ± 15 V; R
V
f
E
GE
G
on
E
off
C
V
= 25 V; V
= 0 V; f = 1 MHz
ies
CE
GE
Q
V
= 300V; V
= 15 V; I
Gon
CE
GE
R
(per IGBT)
thJC
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
13
T5
T1
D1
9
1
10
2
T2
T6
D2
11
3
12
4
17
Maximum Ratings
= 125°C
I
=
VJ
CM
≤ V
V
CEK
= 22 Ω; T
= 125°C
VJ
G
Characteristic Values
(T
= 25°C, unless otherwise specified)
VJ
min.
typ.
= 25°C
1.9
VJ
T
= 125°C
2.2
VJ
4.5
= 25°C
VJ
= 125°C
0.7
VJ
50
60
= 125°C
300
30
2.3
1.7
2800
= 50 A
120
C
MKI 50-06 A7
MKI 50-06 A7T
I
= 72 A
C25
V
= 600 V
CES
V
= 1.9 V
CE(sat) typ.
D5
T
16
14
D6
T
Features
• NPT IGBT technology
• low saturation voltage
• low switching losses
600
V
• square RBSOA, no latch up
± 20
• high short circuit capability
V
• positive temperature coefficient for
72
A
easy parallelling
50
A
• MOS input, voltage controlled
• ultra fast free wheeling diodes
100
A
• solderable pins for PCB mounting
CES
• package with copper base plate
10
µs
Advantages
• space savings
225
W
• reduced protection circuits
• package designed for wave soldering
Typical Applications
max.
• motor control
- DC motor armature winding
2.4
V
- DC motor excitation winding
V
- synchronous motor excitation winding
•
supply of transformer primary winding
6.5
V
- power supplies
0.6 mA
- welding
mA
- X-ray
- UPS
200
nA
- battery charger
ns
ns
ns
ns
mJ
mJ
pF
nC
0.55 K/W
20110119a
1 - 4

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MKI50-06A7 Summary of contents

  • Page 1

    ... off MHz ies 300V Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Maximum Ratings = 125° ≤ CEK = 22 Ω ...

  • Page 2

    ... Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight Temperature Sensor NTC (MKI ... A7T version only) Symbol Conditions 25° 25/50 © 2011 IXYS All rights reserved Maximum Ratings 72 45 Characteristic Values min. typ. = 25°C 1 125°C 1 125° Maximum Ratings -40 ...

  • Page 3

    ... I 13V Fig. 1 Typ. output characteristics 150 120 125° Fig. 3 Typ. transfer characteristics Fig. 5 Typ. turn on gate charge © 2011 IXYS All rights reserved I C 11V 25° 25° 20V 300V 50A C 120 nC 160 Q G MKI 50-06 A7 MKI 50-06 A7T 150 A 120 ...

  • Page 4

    ... Fig. 9 Typ. turn on energy and switching times versus gate resistor 120 Ω 125° 100 200 300 400 Fig. 11 Reverse biased safe operating area RBSOA © 2011 IXYS All rights reserved 100 t d(on off 300V ±15V 22Ω 125° 120 d(on) ...

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