IXDN75N120 IXYS, IXDN75N120 Datasheet

IXDN75N120

Manufacturer Part Number

IXDN75N120

Description

IGBT 1200V 150A SOT-227B

Manufacturer

IXYS

Datasheet

1.IXDN75N120.pdf (4 pages)

Specifications of IXDN75N120

Igbt Type

NPT

Configuration

Single

Voltage - Collector Emitter Breakdown (max)

1200V

Vce(on) (max) @ Vge, Ic

2.7V @ 15V, 75A

Current - Collector (ic) (max)

150A

Current - Collector Cutoff (max)

4mA

Input Capacitance (cies) @ Vce

5.5nF @ 25V

Power - Max

660W

Input

Standard

Ntc Thermistor

Mounting Type

Chassis Mount

Package / Case

SOT-227, miniBLOC

Vces, (v)

1200

Ic25, Tc=25°c, Igbt, (a)

150

Ic90, Tc=90°c, Igbt, (a)

Vce(sat), Max, Tj=25°c, Igbt, (v)

2.7

Tfi, Typ, Igbt, (ns)

Eoff, Typ, Tj=125°c, Igbt, (mj)

10.5

Rthjc, Max, Igbt, (°c/w)

0.19

If, Tc=90°c, Diode, (a)

Rthjc, Max, Diode, (k/w)

Package Style

SOT-227B

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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High Voltage IGBT

Short Circuit SOA Capability

Square RBSOA

Symbol

RBSOA

(SCSOA)

Weight

Symbol

C25

C90

CES

GES

stg

GEM

ISOL

GE(th)

CE(sat)

CES

CGR

GES

(BR)CES

Conditions

Continuous

Transient

Clamped inductive load, L = 30 µH

50/60 Hz; I

Mounting torque

Terminal connection torque (M4)

Conditions

= 3 mA, V

= 75 A, V

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 90°C

= 90°C, t

= 25°C

= 15 W, non repetitive

= ±15 V, T

= ±15 V, V

= 0 V

= V

= 0 V, V

CES

ISOL

= 1 ms

= 15 V

£ 1 mA

= ± 20 V

= V

= 125°C, R

= V

CES

IGBT

, T

= 25°C

= 125°C

= 20 kW

= 125°C

= 15 W

= 25°C, unless otherwise specified)

1200

min.

IXDN 75N120

4.5

Characteristic Values

-40 ... +150

CEK

Maximum Ratings

typ.

2.2

1.5/13 Nm/lb.in.

< V

= 150

1200

2500

±20

±30

150

190

660

CES

max.

± 500 nA

6.5

2.7

4 mA

µs

°C

miniBLOC, SOT-227 B

E = Emitter

G = Gate,

Main or Kelvin Emitter

Features

Advantages

Typical Applications

C25

NPT IGBT technology

low saturation voltage

low switching losses

square RBSOA, no latch up

high short circuit capability

positive temperature coefficient for

easy paralleling

MOS input, voltage controlled

International standard package

miniBLOC

Space savings

AC motor speed control

DC servo and robot drives

DC choppers

Uninteruptible power supplies (UPS)

Switch-mode and resonant-mode

power supplies

Either Emitter terminal can be used as

Easy to mount with 2 screws

High power density

CES

CE(sat) typ

E153432

= 1200 V

= 150 A

= 2.2 V

C = Collector

E = Emitter

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Related parts for IXDN75N120

IXDN75N120 Summary of contents

Page 1

... (BR)CES mA GE(th CES CE CES ± GES CE(sat © 2000 IXYS All rights reserved IXDN 75N120 G E Maximum Ratings 1200 = 20 kW 1200 GE ±20 ±30 150 95 190 = 150 < V CEK CES , T = 125° 660 2500 -40 ... +150 -40 ... +150 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Characteristic Values (T = 25° ...

Page 2

... Inductive load d(off ± 600 off R thJC R Package with heatsink compound thCK © 2000 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 5500 750 330 = 0.5 V 360 CE CES 100 50 = 125°C J 650 50 12.1 10.5 0.1 ...

Page 3

... Fig. 4 Typ. turn on gate charge © 2000 IXYS All rights reserved V =17V GE 15V 13V I C 11V 9V 2.5 3 IXDN75N120 nC 400 Q G IXDN 75N120 175 T = 125° 150 125 100 0.0 0.5 1.0 1.5 2.0 2.5 3 Fig. 2 Typ. output characteristics ...

Page 4

... Typ. turn off energy and switching times versus gate resistor 1 0.1 single pulse 0.00001 0.0001 0.001 0.01 t Fig. 10 Typ. transient thermal impedance 800 E off ns t d(off) 600 t 400 V = 600V ±15V 200 125° 150 A 2000 ns t d(off) 1600 t 1200 E off 800 400 IXDN75N120 0 ...

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