MWI25-12E7 IXYS, MWI25-12E7 Datasheet

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MWI25-12E7

Manufacturer Part Number
MWI25-12E7
Description
MOD IGBT SIXPACK RBSOA 1200V E2
Manufacturer
IXYS
Datasheet

Specifications of MWI25-12E7

Configuration
Three Phase Inverter
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 25A
Current - Collector (ic) (max)
52A
Current - Collector Cutoff (max)
400µA
Input Capacitance (cies) @ Vce
2nF @ 25V
Power - Max
225W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E2
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
52A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MWI25-12E7
Manufacturer:
LUCENT
Quantity:
492
Part Number:
MWI25-12E7
Quantity:
60
IGBT Module
Sixpack
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
I
I
I
V
t
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
IGBTs
C25
C80
CM
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
ies
thJC
Gon
Conditions
T
T
T
V
RBSOA; clamped inductive load; L = 100 µH
V
SCSOA; non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
C
C
Inductive load, T
V
V
VJ
C
C
C
GE
CE
CE
CE
CE
CE
CE
GE
= 1 mA; V
= 25 A; V
= 25°C
= 80°C
= 25°C
= 25°C to 150°C
= 900 V; V
= V
= 600 V; V
= ± 15 V; R
= 0 V; V
= 25 V; V
= 600 V; I
= ± 15 V; R
CES
;
GE
GE
GE
GE
= 15 V; T
C
GE
GE
= ± 20 V
G
= V
V
G
= 25 A
= 0 V; f = 1 MHz
GE
= 39 Ω; T
= 15 V; I
= ± 15 V; R
= 39 Ω
VJ
CE
= 0 V; T
= 125°C
T
VJ
VJ
C
= 25°C
= 125°C
VJ
= 35 A
T
G
= 125°C
VJ
VJ
= 39 Ω; T
(T
= 25°C
= 125°C
VJ
13
17
1
2
3
4
= 25°C, unless otherwise specified)
VJ
= 125°C
min.
5
6
7
8
4.5
Characteristic Values
Maximum Ratings
440
150
typ.
1.9
2.1
0.4
3.8
2.0
80
50
50
1200
10
11
12
± 20
V
2
225
9
CES
52
36
70
10
max.
0.55 K/W
200
2.4
6.5
0.4 mA
mA
mJ
mJ
nC
nA
nF
16
15
14
µs
ns
ns
ns
ns
W
V
V
A
A
A
V
V
V
I
V
V
See outline drawing for pin arrangement
Features
• NPT
• HiPerFRED
• Industry Standard Package
Typical Applications
• AC drives
• power supplies with power factor
C25
- low saturation voltage
- positive temperature coefficient for
- fast switching
- short tail current for optimized
circuits
- fast reverse recovery
- low operating forward voltage
- low leakage current
- solderable pins for PCB mounting
- isolated copper base plate
correction
CES
CE(sat) typ.
easy paralleling
performance also in resonant
3
IGBTs
MWI 25-12 E7
TM
diode:
= 52 A
= 1200 V
= 1.9 V
E72873
1 - 4

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MWI25-12E7 Summary of contents

Page 1

... A d(off Ω = ± off MHz ies 600 Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Maximum Ratings 1200 ± 125° CES = 39 Ω 125° 225 Characteristic Values (T = 25° ...

Page 2

... ISOL M Mounting torque (M5) d Symbol Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight © 2004 IXYS All rights reserved Maximum Ratings 50 33 Characteristic Values min. typ. = 25°C 2 125°C 1 125°C VJ 180 1.8 Maximum Ratings -40 ...

Page 3

... 100 Fig. 1 Typ. output characteristics 120 100 125° 25° Fig. 3 Typ. transfer characteristics 120 Fig. 5 Typ. turn on gate charge © 2004 IXYS All rights reserved 25° 600 0.00001 160 200 MWI 25-12 E7 120 100 Fig. 2 Typ. output characteristics 125°C ...

Page 4

... T =125° 600 V I =35A F R 56Ω 50 75Ω 40 75Ω 56Ω 200 400 600 800 1000 -di /dt [A/µs] F Fig. 11 Typ. turn off characteristics of free wheeling diode © 2004 IXYS All rights reserved 100 off 600 ± Ω 125° ...

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