MWI25-12E7 IXYS, MWI25-12E7 Datasheet
MWI25-12E7
Specifications of MWI25-12E7
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MWI25-12E7 Summary of contents
Page 1
... A d(off Ω = ± off MHz ies 600 Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Maximum Ratings 1200 ± 125° CES = 39 Ω 125° 225 Characteristic Values (T = 25° ...
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... ISOL M Mounting torque (M5) d Symbol Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight © 2004 IXYS All rights reserved Maximum Ratings 50 33 Characteristic Values min. typ. = 25°C 2 125°C 1 125°C VJ 180 1.8 Maximum Ratings -40 ...
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... 100 Fig. 1 Typ. output characteristics 120 100 125° 25° Fig. 3 Typ. transfer characteristics 120 Fig. 5 Typ. turn on gate charge © 2004 IXYS All rights reserved 25° 600 0.00001 160 200 MWI 25-12 E7 120 100 Fig. 2 Typ. output characteristics 125°C ...
Page 4
... T =125° 600 V I =35A F R 56Ω 50 75Ω 40 75Ω 56Ω 200 400 600 800 1000 -di /dt [A/µs] F Fig. 11 Typ. turn off characteristics of free wheeling diode © 2004 IXYS All rights reserved 100 off 600 ± Ω 125° ...