IXBN75N170 IXYS, IXBN75N170 Datasheet
IXBN75N170
Specifications of IXBN75N170
Related parts for IXBN75N170
IXBN75N170 Summary of contents
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... CES CE CES 0V ± 20V GES 15V, Note 1 CE(sat) C C90 GE © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXBN75N170 Maximum Ratings 1700 = 1MΩ 1700 GE ±20 ±30 145 75 680 = 1Ω 150 < 0.8 • CES 625 -55 ... +150 150 -55 ... +150 300 ...
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... Characteristic Values Min. Typ. 1.5 /dt = 100A/μs 50 38.2 ≤ 2%. 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXBN75N170 SOT-227B miniBLOC (IXBN) Max 0.20 °C/W °C/W Max 3.0 V μs A μC 6,404,065 B1 6,683,344 ...
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... T = 25ºC J 160 140 120 100 IXBN75N170 Fig. 2. Extended Output Characteristics @ 25º 25V GE 17V 15V 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 150A 75A 37.5A ...
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... IXBN75N170 Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 25º 0.4 0.6 0.8 1.0 1.2 1.4 1 Volts F Fig. 10. Capacitance MHz ...
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... GE 700 300 V = 850V CE 280 600 260 500 240 400 300 220 200 200 100 180 T = 125ºC, 25ºC J 160 110 120 130 140 150 IXBN75N170 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current R = 1Ω 15V 850V 125º 25º 100 I - Amperes C Fig ...