MWI25-12A7T IXYS, MWI25-12A7T Datasheet
MWI25-12A7T
Specifications of MWI25-12A7T
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MWI25-12A7T Summary of contents
Page 1
... IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA Part name (Marking on product) MWI25-12A7 MWI25-12A7T version Features: • NPT IGBT technology • low saturation voltage • positive temperature coefficient for easy paralleling • low switching losses • switching frequency kHz • square RBSOA, no latch up • ...
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... RM t reverse recovery time rr E reverse recovery energy rec(off) R thermal resistance junction to case thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Conditions T = 25°C to 150°C VJ continuous transient ...
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... Symbol Definitions V 0 IGBT Diode IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Conditions I < 1 mA; 50/60 Hz ISOL (M4) with heatsink compound Conditions Conditions ∑ − − Zth exp i ...
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... Product Marking Ordering Part Name Standard MWI 15-12A7 Standard MWI 15-12A7T IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Marking on Product Delivering Mode Base Qty Ordering Code MWI15-12A7 Box MWI15-12A7T Box MWI 25-12A7(T) Dimensions 0.0394“ ...
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... Fig. 1 Typ. output characteristics Fig. 3 Typ. transfer characteristics Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved MWI 25-12A7(T) Fig. 2 Typ. output characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig ...
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... Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig. 11 Reverse biased safe operating area IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved MWI 25-12A7(T) Fig. 8 Typ. turn off energy and switching times versus collector current Fig ...