MWI50-06A7T IXYS, MWI50-06A7T Datasheet
MWI50-06A7T
Manufacturer Part Number
MWI50-06A7T
Description
MOD IGBT SIXPACK RBSOA 600V E2
Manufacturer
IXYS
Datasheet
1.MWI50-06A7.pdf
(4 pages)
Specifications of MWI50-06A7T
Igbt Type
NPT
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 50A
Current - Collector (ic) (max)
72A
Current - Collector Cutoff (max)
600µA
Input Capacitance (cies) @ Vce
2.8nF @ 25V
Power - Max
225W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
E2
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Pin Count
18
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
72
Ic80, Tc = 80°c, Igbt, (a)
50
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
1.9
Eoff, Typ, Tj = 125°c, Igbt, (mj)
1.7
Rthjc, Max, Igbt, (k/w)
0.55
If25, Tc = 25°c, Diode, (a)
72
If80, Tc = 80°c, Diode, (a)
45
Package Style
E2-Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MWI50-06A7T
Manufacturer:
IXYS
Quantity:
32
Company:
Part Number:
MWI50-06A7T
Manufacturer:
ERICSSON
Quantity:
300
Part Number:
MWI50-06A7T
Quantity:
60
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
Type:
MWI 50-06 A7
MWI 50-06 A7T
Symbol
V
V
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
IGBTs
C25
C80
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
tot
CE(sat)
GE(th)
on
off
ies
thJC
Gon
Conditions
T
T
T
V
Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
Inductive load, T
V
V
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
GE
CE
CE
= 1 mA; V
= 50 A; V
= 25°C
= 80°C
= 25°C
= 25°C to 150°C
= V
= V
= 300V; V
= ± 15 V; R
= 0 V; V
= 300 V; I
= ± 15 V; R
= 25 V; V
without NTC
with NTC
NTC - Option:
CES
CES
; V
; V
GE
GE
GE
GE
GE
GE
C
GE
= 15 V; T
= ± 20 V
G
= V
= 0 V; T
G
= ± 15 V; R
= 50 A
= 0 V; f = 1 MHz
= 15 V; I
= 22 Ω; T
= 22 Ω
VJ
CE
= 125°C
T
T
VJ
VJ
VJ
VJ
C
= 25°C
= 25°C
= 125°C
= 125°C
G
VJ
= 50 A
= 22 Ω; T
= 125°C
(T
13
17
1
2
3
4
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
5
6
7
8
min.
4.5
I
Characteristic Values
CM
V
CEK
Maximum Ratings
=
2800
300
120
typ.
≤ V
1.9
2.2
0.7
2.3
1.7
10
11
12
50
60
30
9
± 20
600
100
225
CES
72
50
10
max.
0.55 K/W
200
2.4
6.5
0.6 mA
16
15
14
mA
µs
mJ
mJ
W
nC
nA
pF
ns
ns
ns
ns
V
V
A
A
A
T
T
V
V
V
NTC
I
V
V
See outline drawing for pin arrangement
Features
●
●
●
●
●
●
●
●
●
●
●
Advantages
●
●
●
Typical Applications
●
●
●
C25
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
space savings
reduced protection circuits
package designed for wave soldering
AC motor control
AC servo and robot drives
power supplies
CES
CE(sat) typ.
MWI 50-06 A7
MWI 50-06 A7T
= 72 A
= 600 V
= 1.9 V
20070912a
E72873
1 - 4
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MWI50-06A7T Summary of contents
Page 1
... off MHz ies 300V Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 600 ± 125° 100 ...
Page 2
... R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 72 45 Characteristic Values min. typ. = 25°C 1 125°C 1 125° ...
Page 3
... Fig. 2 Typ. output characteristics 125° 0.0 0.5 1.0 1 Fig. 4 Typ. forward characteristics of free wheeling diode 200 400 600 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 11V 125° 25° 2.0 150 120 125° 300V 30A MWI5006A7 0 800 1000 A/μs 20070912a ...
Page 4
... Fig. 12 Typ. transient thermal impedance 400 ns E off 300 t t d(off) 200 = 300V CE = ±15V GE = 22Ω 100 G = 125° 120 600 ns E off t 400 t d(off) = 300V CE = ±15V GE 200 = 50A = 125° Ω diode IGBT MWI5006A7 20070912a ...