MDI145-12A3 IXYS, MDI145-12A3 Datasheet
MDI145-12A3
Manufacturer Part Number
MDI145-12A3
Description
IGBT NPT BUCK 1200V 160A Y4-M5
Manufacturer
IXYS
Datasheet
1.MDI145-12A3.pdf
(4 pages)
Specifications of MDI145-12A3
Configuration
Single
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 100A
Current - Collector (ic) (max)
160A
Current - Collector Cutoff (max)
6mA
Input Capacitance (cies) @ Vce
6.5nF @ 25V
Power - Max
700W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Y4-M5
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
160A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
160
Ic80, Tc = 80°c, Igbt, (a)
110
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.2
Eoff, Typ, Tj = 125°c, Igbt, (mj)
15
Rthjc, Max, Igbt, (k/w)
0.18
If25, Tc = 25°c, Diode, (a)
150
If80, Tc = 80°c, Diode, (a)
95
Rthjc, Max, Diode, (k/w)
0.45
Package Style
Y4-M5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
V
V
I
I
I
t
(SCSOA)
RBSOA
P
T
T
V
M
d
d
a
Weight
Data according to a single IGBT/FRED unless otherwise stated.
© 2000 IXYS All rights reserved
C25
C80
CM
SC
J
stg
S
A
CES
CGR
GES
GEM
tot
ISOL
d
Conditions
T
T
Continuous
Transient
T
T
T
V
R
V
Clamped inductive load, L = 100 mH
T
50/60 Hz, RMS
I
Insulating material: Al
Mounting torque (module)
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Typical
ISOL
J
J
C
C
C
C
GE
G
GE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 80°C
= 80°C, t
= 6.8 W, non repetitive
= ±15 V, T
= 25°C
= ±15 V, V
£ 1 mA
p
6
4
5
7
= 1 ms
J
CE
= 125°C, R
= V
(teminals)
t = 1 min
t = 1 s
CES
MII
2
O
GE
, T
3
= 20 kW
J
G
= 125°C
= 6.8 W
1
3
2
4
5
MID
-40 ... +150
V
I
1
3
2
CM
2.25-2.75
Maximum Ratings
CEK
2.5-3.7
= 200
< V
20-25
22-33
7
6
1200
1200
4000
4800
12.7
160
110
220
700
150
130
±20
±30
9.6
4.6
CES
10
50
MDI
lb.in.
lb.in.
m/s
MII 145-12 A3
mm
mm
Nm
Nm
V
V
V
V
A
A
A
ms
A
W
°C
°C
V~
V~
g
oz.
2
1
3
2
I
V
V
Features
Advantages
Typical Applications
C25
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
package with DCB ceramic base plate
isolation voltage 4800 V
UL registered E72873
space and weight savings
reduced protection circuits
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
CES
CE(sat) typ.
3
MID 145-12 A3
MDI 145-12 A3
= 160 A
= 1200 V
= 2.2 V
2
1
4
5
E 72873
1 - 4
6
7
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MDI145-12A3 Summary of contents
Page 1
... Insulating material Mounting torque (module) d (teminals) d Creepage distance on surface S d Strike distance through air A a Max. allowable acceleration Weight Typical Data according to a single IGBT/FRED unless otherwise stated. © 2000 IXYS All rights reserved MID Maximum Ratings 1200 = 20 kW 1200 GE ±20 ± ...
Page 2
... 25° 80° 100 - 125° 600 thJC R with heatsink compound thJS © 2000 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. 1200 4 25° 125° 2.2 6.5 1 0.5 100 60 = 125°C J 600 0.36 Characteristic Values (T = 25° ...
Page 3
... J 200 I C 150 100 Fig. 3 Typ. transfer characteristics 600V 100A 100 200 300 Fig. 5 Typ. turn on gate charge © 2000 IXYS All rights reserved V =17V GE 15V I 13V C 11V 9V 2.5 3 400 500 MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 250 T = 125°C ...
Page 4
... A 200 I CM 160 6.8 G 120 T = 125° < V CEK CES 200 400 600 800 1000 1200 Fig. 11 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved 120 off 600V ±15V 6 125° 150 200 A ...