MDI145-12A3 IXYS, MDI145-12A3 Datasheet - Page 4

• Manufacturer Part Number: MDI145-12A3
• Description: IGBT NPT BUCK 1200V 160A Y4-M5
• Manufacturer: IXYS

Specifications of MDI145-12A3

• Configuration: Single
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 100A
• Current - Collector (ic) (max): 160A
• Current - Collector Cutoff (max): 6mA
• Input Capacitance (cies) @ Vce: 6.5nF @ 25V
• Power - Max: 700W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Y4-M5
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 160A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 160
• Ic80, Tc = 80°c, Igbt, (a): 110
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 15
• Rthjc, Max, Igbt, (k/w): 0.18
• If25, Tc = 25°c, Diode, (a): 150
• If80, Tc = 80°c, Diode, (a): 95
• Rthjc, Max, Diode, (k/w): 0.45
• Package Style: Y4-M5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
E
E
I
CM
on
on
240
200
160
120
mJ
40
30
20
10
80
40
50
mJ
40
30
20
10
A
0
0
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
I
T
C
J
CE
GE
= 125°C
= 100A
= 600V
200
= ±15V
8
50
times versus collector current
times versus gate resistor
RBSOA
400
16
600
24
100
R
T
V
J
CEK
G
= 125°C
= 6.8
< V
800 1000 1200
32
t
E
W
CES
d(on)
on
150
R
I
G
C
40
V
V
V
R
T
CE
J
CE
GE
G
48
= 6.8
= 125°C
= 600V
= ±15V
t
200
r
W
E
t
t
W
d(on)
r
A
on
V
56
120
90
60
30
0
300
240
180
120
60
0
ns
ns
t
t
Z
0.00001
E
E
thJC
0.0001
off
off
0.001
0.01
K/W
0.1
mJ
mJ
0.00001 0.0001
40
30
20
10
25
20
15
10
0
5
0
1
0
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
MII 145-12 A3
V
V
I
T
C
J
CE
GE
= 125°C
= 100A
= 600V
= ±15V
8
single pulse
50
times versus collector current
times versus gate resistor
16
diode
0.001
100
24
32
0.01
IGBT
MID 145-12 A3
MDI 145-12 A3
150
R
G
I
40
C
t
V
V
R
T
0.1
CE
GE
J
G
= 6.8
= 125°C
48
= 600V
= ±15V
200
E
t
t
E
d(off)
t
145-12
s
f
W
W
off
d(off)
t
A
off
f
56
1
800
600
400
200
0
ns
1500
1200
900
600
300
0
ns
4 - 4
t
t