MWI35-12A7T IXYS, MWI35-12A7T Datasheet
MWI35-12A7T
Manufacturer Part Number
MWI35-12A7T
Description
MOD IGBT SIXPACK RBSOA 1200V E2
Manufacturer
IXYS
Datasheet
1.MWI35-12A7T.pdf
(4 pages)
Specifications of MWI35-12A7T
Igbt Type
NPT
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 35A
Current - Collector (ic) (max)
62A
Current - Collector Cutoff (max)
2mA
Input Capacitance (cies) @ Vce
2nF @ 25V
Power - Max
280W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
E2
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
E2-Pack
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MWI35-12A7T
Manufacturer:
ERICSSON
Quantity:
1 000
Part Number:
MWI35-12A7T
Quantity:
60
Part Number:
MWI35-12A7T
Quantity:
60
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
Preliminary Data
Type:
MWI 35-12 A7
MWI 35-12 A7T
Symbol
V
V
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
IGBTs
C25
C80
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
tot
CE(sat)
GE(th)
on
off
ies
thJC
Gon
Conditions
T
T
T
V
Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
= 35 A; V
= 1.2 mA; V
= 25°C
= 80°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= V
= V
= 600V; V
= ± 15 V; R
= 0 V; V
= 25 V; V
CE
GE
NTC - Option:
without NTC
with NTC
CES
CES
= 600 V; I
= ± 15 V; R
; V
; V
GE
GE
GE
GE
GE
GE
GE
= 15 V; T
= ± 20 V
G
= 0 V; T
= ± 15 V; R
= 0 V; f = 1 MHz
= 15 V; I
= 39 W; T
= V
C
G
= 35 A
VJ
= 39 W
CE
= 125°C
T
T
VJ
VJ
VJ
VJ
C
= 25°C
= 125°C
= 25°C
= 125°C
VJ
G
= 35 A
13
17
= 39 W; T
= 125°C
1
2
3
4
(T
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
5
6
7
8
min.
4.5
Characteristic Values
I
V
CM
CEK
10
11
12
Maximum Ratings
9
=
2000
100
500
140
typ.
£ V
2.2
2.6
5.4
4.2
80
70
1200
± 20
2
280
CES
62
44
70
10
max.
0.44 K/W
200
2.8
6.5
16
15
14
2 mA
T
T
mA
µs
mJ
mJ
nC
W
nA
NTC
pF
ns
ns
ns
ns
V
V
A
A
A
V
V
V
I
V
V
Features
Advantages
Typical Applications
C25
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
space savings
reduced protection circuits
package designed for wave soldering
AC motor control
AC servo and robot drives
power supplies
CES
CE(sat) typ.
MWI 35-12 A7
MWI 35-12 A7T
= 62 A
= 1200 V
= 2.2 V
1 - 4
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MWI35-12A7T Summary of contents
Page 1
... 600 d(off ± off MHz ies 600V Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved Maximum Ratings 1200 ± 125° £ CEK CES = 125° 280 Characteristic Values (T = 25° ...
Page 2
... M Mounting torque (M5) d Symbol Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight © 2000 IXYS All rights reserved Maximum Ratings 50 33 Characteristic Values min. typ. = 25° 125°C 1 125° 200 Characteristic Values min. ...
Page 3
... Fig. 2 Typ. output characteristics 125° Fig. 4 Typ. forward characteristics of free wheeling diode 125° 600V 35A 200 400 600 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode V =17V GE 15V 13V 11V 9V 3 25° 300 200 100 MWI35-12A7 0 m 800 A/ s 1000 ...
Page 4
... IGBT single pulse 0.00001 0.0001 0.001 0.01 t Fig. 12 Typ. transient thermal impedance 600 ns 500 t d(off) E off t 400 300 V = 600V ±15V GE W 200 125°C J 100 1500 t d(off) ns 1200 t E off 900 600 300 MWI35-12A7 0 ...